Method and apparatus for defined magnetizing of permanently magnetizable elements and magnetoresistive sensor structures
    2.
    发明授权
    Method and apparatus for defined magnetizing of permanently magnetizable elements and magnetoresistive sensor structures 有权
    用于定义永久磁化元件和磁阻传感器结构的磁化的方法和装置

    公开(公告)号:US08063632B2

    公开(公告)日:2011-11-22

    申请号:US12163552

    申请日:2008-06-27

    IPC分类号: G01R33/09

    CPC分类号: G01R33/1207 G01R33/1215

    摘要: A method of magnetizing a permanently magnetizable element associated with a magnetic field sensor structure includes generating a test magnetic field penetrating the magnetic field sensor structure and the permanently magnetizable element, detecting the magnetic field and providing a test signal based on a magnetic field through the magnetic field sensor structure, aligning the test magnetic field and the magnetic field sensor structure with the permanently magnetizable element to each other, until the test signal reaches a set value corresponding to a predetermined magnetized field distribution with respect to the magnetic field sensor structure, and generating a magnetizing field for permanently magnetizing the element to be permanently magnetized, wherein the magnetizing field corresponds to the predetermined magnetic field distribution within a tolerance range.

    摘要翻译: 磁化与磁场传感器结构相关联的永久可磁化元件的方法包括产生穿过磁场传感器结构和永久可磁化元件的测试磁场,检测磁场并且通过磁场提供基于磁场的测试信号 场传感器结构,将测试磁场和磁场传感器结构与永久可磁化元件相互对准,直到测试信号达到相对于磁场传感器结构的预定磁场分布对应的设定值,并产生 用于永久磁化待永久磁化的元件的磁化场,其中磁化场对应于在公差范围内的预定磁场分布。

    Method and Apparatus for Defined Magnetizing of Permanently Magnetizable Elements and Magnetoresistive Sensor Structures
    4.
    发明申请
    Method and Apparatus for Defined Magnetizing of Permanently Magnetizable Elements and Magnetoresistive Sensor Structures 有权
    用于永久磁化元素和磁阻传感器结构的定义磁化的方法和装置

    公开(公告)号:US20090001982A1

    公开(公告)日:2009-01-01

    申请号:US12163552

    申请日:2008-06-27

    IPC分类号: H01F13/00 G01R33/09

    CPC分类号: G01R33/1207 G01R33/1215

    摘要: A method of magnetizing a permanently magnetizable element associated with a magnetic field sensor structure includes generating a test magnetic field penetrating the magnetic field sensor structure and the permanently magnetizable element, detecting the magnetic field and providing a test signal based on a magnetic field through the magnetic field sensor structure, aligning the test magnetic field and the magnetic field sensor structure with the permanently magnetizable element to each other, until the test signal reaches a set value corresponding to a predetermined magnetized field distribution with respect to the magnetic field sensor structure, and generating a magnetizing field for permanently magnetizing the element to be permanently magnetized, wherein the magnetizing field corresponds to the predetermined magnetic field distribution within a tolerance range.

    摘要翻译: 磁化与磁场传感器结构相关联的永久可磁化元件的方法包括产生穿过磁场传感器结构和永久可磁化元件的测试磁场,检测磁场并且通过磁场提供基于磁场的测试信号 场传感器结构,将测试磁场和磁场传感器结构与永久可磁化元件相互对准,直到测试信号达到相对于磁场传感器结构的预定磁场分布对应的设定值,并产生 用于永久磁化待永久磁化的元件的磁化场,其中磁化场对应于在公差范围内的预定磁场分布。

    Off-center angle measurement system
    6.
    发明授权
    Off-center angle measurement system 有权
    偏心角度测量系统

    公开(公告)号:US08736257B2

    公开(公告)日:2014-05-27

    申请号:US13267534

    申请日:2011-10-06

    IPC分类号: G01B7/30

    CPC分类号: G01D5/145

    摘要: A method for measuring an angular position of a rotating shaft, the method including providing a magnetic field which rotates with the shaft about an axis of rotation, positioning an integrated circuit having first and second magnetic sensing bridges within the magnetic field at a radially off-center position from the axis of rotation, the first and second magnetic sensing bridges respectively providing first and second signals representative of first and second magnetic field directions, the integrated circuit having a set of adjustment parameters for modifying attributes of the first and second signals, modifying values of the set of adjustment parameters until errors in the first and second signals are substantially minimized, and determining an angular position of the shaft based on the first and second signals.

    摘要翻译: 一种用于测量旋转轴的角位置的方法,所述方法包括提供围绕旋转轴线与所述轴一起旋转的磁场,将具有第一和第二磁感测桥的集成电路定位在所述磁场内的径向断开状态, 所述第一和第二磁感测桥分别提供表示第一和第二磁场方向的第一和第二信号,所述集成电路具有用于修改第一和第二信号的属性的一组调整参数,修改 直到第一和第二信号中的误差基本上最小化的调整参数集合的值,以及基于第一和第二信号来确定轴的角位置。

    Off-center angle measurement system
    8.
    发明授权
    Off-center angle measurement system 有权
    偏心角度测量系统

    公开(公告)号:US08058866B2

    公开(公告)日:2011-11-15

    申请号:US12206410

    申请日:2008-09-08

    IPC分类号: G01B7/30

    CPC分类号: G01D5/145

    摘要: An angle measurement system including a magnet coupled to a rotating member and adapted to provide a magnetic field which rotates with the rotating member about a rotational axis of the rotating member, and an integrated circuit angle sensor disposed within the magnetic field at a radially off-center position from the rotational axis. The integrated circuit angle sensor includes first and second bridges of magneto resistive elements configured to respectively provide first and second signals representative of substantially orthogonal first and second directional components of the magnetic field and together representative of an angular position of the rotating member, and a set of adjustment parameters for adjusting attributes of the first and second signals having values selected to minimize errors in the first and second signals.

    摘要翻译: 一种角度测量系统,包括耦合到旋转构件并适于提供围绕旋转构件的旋转轴线旋转的磁场的磁体,以及集成电路角度传感器,其设置在径向断开的磁场内, 从旋转轴的中心位置。 集成电路角度传感器包括磁电阻元件的第一和第二桥,其被配置为分别提供代表磁场的基本上正交的第一和第二方向分量的第一和第二信号,并且一起代表旋转构件的角位置,以及一组 用于调整具有被选择为使第一和第二信号中的误差最小的第一和第二信号的属性的调整参数。

    Memory circuit
    10.
    发明授权
    Memory circuit 有权
    存储电路

    公开(公告)号:US06795347B2

    公开(公告)日:2004-09-21

    申请号:US10407736

    申请日:2003-04-04

    IPC分类号: G11C1604

    CPC分类号: G11C16/0441

    摘要: The non-volatile memory cell of a memory circuit includes at least one enhancement pMOS transistor having a floating gate. It further includes an enhancement nMOS transistor having a floating gate insulated from the floating gate of the pMOS transistor. A control input is capacitively coupled to the floating gate of the pMOS transistor and to the floating gate of the nMOS transistor. The pMOS transistor and the nMOS transistor are connected by a connection point, the connection point being connected to an output of the memory cell. The pMOS transistor is additionally connected to a first terminal of the memory cell, while the nMOS transistor is additionally connected to a second terminal of the memory cell. A supply voltage is appliable to the memory cell via the first and second terminals.

    摘要翻译: 存储电路的非易失性存储单元包括具有浮置栅极的至少一个增强型pMOS晶体管。 其还包括具有与pMOS晶体管的浮置栅极绝缘的浮置栅极的增强型nMOS晶体管。 控制输入​​电容耦合到pMOS晶体管的浮置栅极和nMOS晶体管的浮置栅极。 pMOS晶体管和nMOS晶体管通过连接点连接,连接点连接到存储单元的输出。 pMOS晶体管另外连接到存储单元的第一端,而nMOS晶体管另外连接到存储单元的第二端。 电源电压经由第一和第二端子适用于存储器单元。