公开(公告)号：US20240006525A1

公开(公告)日：2024-01-04

申请号：US17870746

申请日：2022-07-21

Applicant: United Microelectronics Corp.

Inventor： Yuan Yu Chung ,  Bo-Yu Chen ,  You-Jia Chang ,  Lung-En Kuo ,  Kun-Yuan Liao ,  Chun-Lung Chen

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7786 ,  H01L29/66462 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for manufacturing a high electron mobility transistor device includes providing a substrate. A channel material, a barrier material, a polarization adjustment material and a conductive material are formed on the substrate. A hard mask layer is formed on the conductive material. The conductive material is patterned to form a conductive layer by using the hard mask layer as a mask. A plurality of protection layers is formed on sidewalls of the hard mask layer and the conductive layer. The polarization adjustment material is patterned to form a polarization adjustment layer by using the plurality of protection layers and the hard mask as masks. The plurality of protection layers is removed. A portion of the conductive layer is laterally removed to form a first gate conductive layer.

公开(公告)号：US20240071758A1

公开(公告)日：2024-02-29

申请号：US17951119

申请日：2022-09-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  You-Jia Chang ,  Bo-Yu Chen ,  Yun-Chun Wang ,  Ruey-Chyr Lee ,  Wen-Jung Liao

IPC: H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L21/0254 ,  H01L21/30612 ,  H01L29/2003 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.