公开(公告)号：US12159917B2

公开(公告)日：2024-12-03

申请号：US17320071

申请日：2021-05-13

Applicant: United Microelectronics Corp.

Inventor： Xiang Li ,  Ding Lung Chen ,  Changda Yao

IPC: H01L29/66 ,  H01L27/06

Abstract: A method of manufacturing a capacitor structure is provided, including the following steps. A substrate is provided. A first doped silicon material layer is formed on the substrate. A surface flattening process is performed on the first doped silicon material layer through a plasma treatment. An insulating material layer is formed on the first doped silicon material layer after the surface flattening process is performed. A second doped silicon material layer is formed on the insulating material layer. The first doped silicon material layer is patterned into a first electrode. The insulating material layer is patterned into an insulating layer. The second doped silicon material layer is patterned into a second electrode. The method of manufacturing the capacitor structure may be used to produce a capacitor with better reliability and may improve capacitance density.

公开(公告)号：US20220344492A1

公开(公告)日：2022-10-27

申请号：US17320071

申请日：2021-05-13

Applicant: United Microelectronics Corp.

Inventor： Xiang Li ,  Ding Lung Chen ,  Changda Yao

IPC: H01L29/66

Abstract: A method of manufacturing a capacitor structure is provided, including the following steps. A substrate is provided. A first doped silicon material layer is formed on the substrate. A surface flattening process is performed on the first doped silicon material layer through a plasma treatment. An insulating material layer is formed on the first doped silicon material layer after the surface flattening process is performed. A second doped silicon material layer is formed on the insulating material layer. The first doped silicon material layer is patterned into a first electrode. The insulating material layer is patterned into an insulating layer. The second doped silicon material layer is patterned into a second electrode. The method of manufacturing the capacitor structure may be used to produce a capacitor with better reliability and may improve capacitance density.