公开(公告)号：US20240038832A1

公开(公告)日：2024-02-01

申请号：US17892116

申请日：2022-08-21

Applicant: United Microelectronics Corp.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  Chee-Hau Ng ,  Chin-Wei Ho

IPC: H01L49/02

CPC classification number: H01L28/91

Abstract: A semiconductor device includes a substrate, a high-Q capacitor, an ultra high density capacitor, and an interconnection. At least one trench is formed in the substrate. The high-Q capacitor is disposed on a surface of the substrate, and includes a bottom electrode, an upper electrode located on the bottom electrode, and a first dielectric layer located between the upper and bottom electrodes. The ultra high density capacitor is disposed on the trench of the substrate, and includes a first electrode conformally deposited in the trench, a second electrode located on the first electrode, and a second dielectric layer located between the first and second electrodes. The interconnection connects one of the upper electrode and the bottom electrode to one of the first electrode and the second electrode, and connects the other of the upper electrode and the bottom electrode to the other of the first electrode and the second electrode.