公开(公告)号：US20210104602A1

公开(公告)日：2021-04-08

申请号：US17124124

申请日：2020-12-16

Applicant: United Microelectronics Corp.

Inventor： Wen-Shen Li ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Xingxing Chen ,  Chee-Hau Ng

IPC: H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an insulating layer, a semiconductor layer, a plurality of isolation structures, a transistor, a first contact, a plurality of silicide layers, and a protective layer. The semiconductor layer is disposed on a front side of the insulating layer. The plurality of isolation structures are disposed in the semiconductor layer. The transistor is disposed on the semiconductor layer. The first contact is disposed beside the transistor and passes through one of the plurality of isolation structures and the insulating layer therebelow. The plurality of silicide layers are respectively disposed on a bottom surface of the first contact and disposed on a source, a drain, and a gate of the transistor. The protective layer is disposed between the first contact and the insulating layer.

公开(公告)号：US10903314B2

公开(公告)日：2021-01-26

申请号：US16017840

申请日：2018-06-25

Applicant: United Microelectronics Corp.

Inventor： Wen-Shen Li ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Xingxing Chen ,  Chee-Hau Ng

IPC: H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306 ,  H01L21/285

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an insulating layer, a semiconductor layer, a plurality of isolation structures, a transistor, a first contact, a plurality of silicide layers, and a protective layer. The semiconductor layer is disposed on a front side of the insulating layer. The plurality of isolation structures are disposed in the semiconductor layer. The transistor is disposed on the semiconductor layer. The first contact is disposed beside the transistor and passes through one of the plurality of isolation structures and the insulating layer therebelow. The plurality of silicide layers are respectively disposed on a bottom surface of the first contact and disposed on a source, a drain, and a gate of the transistor. The protective layer is disposed between the first contact and the insulating layer.

公开(公告)号：US20240038832A1

公开(公告)日：2024-02-01

申请号：US17892116

申请日：2022-08-21

Applicant: United Microelectronics Corp.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  Chee-Hau Ng ,  Chin-Wei Ho

IPC: H01L49/02

CPC classification number: H01L28/91

Abstract: A semiconductor device includes a substrate, a high-Q capacitor, an ultra high density capacitor, and an interconnection. At least one trench is formed in the substrate. The high-Q capacitor is disposed on a surface of the substrate, and includes a bottom electrode, an upper electrode located on the bottom electrode, and a first dielectric layer located between the upper and bottom electrodes. The ultra high density capacitor is disposed on the trench of the substrate, and includes a first electrode conformally deposited in the trench, a second electrode located on the first electrode, and a second dielectric layer located between the first and second electrodes. The interconnection connects one of the upper electrode and the bottom electrode to one of the first electrode and the second electrode, and connects the other of the upper electrode and the bottom electrode to the other of the first electrode and the second electrode.

公开(公告)号：US20190355812A1

公开(公告)日：2019-11-21

申请号：US16017840

申请日：2018-06-25

Applicant: United Microelectronics Corp.

Inventor： Wen-Shen Li ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Xingxing Chen ,  Chee-Hau Ng

IPC: H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an insulating layer, a semiconductor layer, a plurality of isolation structures, a transistor, a first contact, a plurality of silicide layers, and a protective layer. The semiconductor layer is disposed on a front side of the insulating layer. The plurality of isolation structures are disposed in the semiconductor layer. The transistor is disposed on the semiconductor layer. The first contact is disposed beside the transistor and passes through one of the plurality of isolation structures and the insulating layer therebelow. The plurality of silicide layers are respectively disposed on a bottom surface of the first contact and disposed on a source, a drain, and a gate of the transistor. The protective layer is disposed between the first contact and the insulating layer.