公开(公告)号：US20220415926A1

公开(公告)日：2022-12-29

申请号：US17383283

申请日：2021-07-22

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan Qi ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

公开(公告)号：US12249607B2

公开(公告)日：2025-03-11

申请号：US18152781

申请日：2023-01-11

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan Qi ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84 ,  H01L21/02

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

公开(公告)号：US11605648B2

公开(公告)日：2023-03-14

申请号：US17383283

申请日：2021-07-22

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan Qi ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/762 ,  H01L21/02

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.