公开(公告)号：US20150050751A1

公开(公告)日：2015-02-19

申请号：US13965600

申请日：2013-08-13

Applicant: United Microelectronics Corp.

Inventor： Ji Feng ,  Hai-Long Gu ,  Ying-Tu Chen

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L21/76205 ,  H01L21/76237 ,  H01L22/20

Abstract: A method of controlling a threshold voltage is provided. The method of controlling a threshold voltage includes performing a film-thickness measuring step to measure the thickness of a film layer on a wafer to obtain a film-thickness value. Then, at least one parameter is decided, selected, or generated according to the film-thickness value. Next, an ion implantation process is performed on the wafer, wherein the ion implantation process is executed according to the parameter to form a threshold voltage adjustment region in the wafer below the film layer.

Abstract translation: 提供了一种控制阈值电压的方法。 控制阈值电压的方法包括进行膜厚测量步骤，以测量晶片上的薄膜层的厚度以获得薄膜厚度值。 然后，根据膜厚度值决定，选择或生成至少一个参数。 接下来，在晶片上进行离子注入工艺，其中根据参数执行离子注入处理，以在薄膜层下方的晶片中形成阈值电压调整区域。

公开(公告)号：US09082660B2

公开(公告)日：2015-07-14

申请号：US13965600

申请日：2013-08-13

Applicant: United Microelectronics Corp.

Inventor： Ji Feng ,  Hai-Long Gu ,  Ying-Tu Chen

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/762

CPC classification number: H01L22/12 ,  H01L21/76205 ,  H01L21/76237 ,  H01L22/20

Abstract: A method of controlling a threshold voltage is provided. The method of controlling a threshold voltage includes performing a film-thickness measuring step to measure the thickness of a film layer on a wafer to obtain a film-thickness value. Then, at least one parameter is decided, selected, or generated according to the film-thickness value. Next, an ion implantation process is performed on the wafer, wherein the ion implantation process is executed according to the parameter to form a threshold voltage adjustment region in the wafer below the film layer.

Abstract translation: 提供了一种控制阈值电压的方法。 控制阈值电压的方法包括进行膜厚测量步骤，以测量晶片上的薄膜层的厚度以获得薄膜厚度值。 然后，根据膜厚度值决定，选择或生成至少一个参数。 接下来，在晶片上进行离子注入工艺，其中根据参数执行离子注入处理，以在薄膜层下方的晶片中形成阈值电压调整区域。