公开(公告)号：US20240324197A1

公开(公告)日：2024-09-26

申请号：US18306231

申请日：2023-04-24

Applicant: United Microelectronics Corp.

Inventor： Hung Hsun Shuai ,  Chih-Jung Chen

IPC: H10B41/40 ,  H01L23/60 ,  H10B41/30

CPC classification number: H10B41/40 ,  H01L23/60 ,  H10B41/30

Abstract: A semiconductor device includes a substrate, a doped ring, a plurality of contacts, and a plurality of conductive lines. The substrate includes a first region and a second region surrounding the first region. The doped ring is located in the substrate in the second region and surrounds the first region. The doped ring includes a first doped region and a plurality of second doped regions. The first doped region is located in the substrate in the second region and surrounds the first region. The first doped region has an opening. The second doped regions are separated from each other and located in the substrate of the opening. The contacts are electrically connected to the second doped regions. The conductive lines are connected to the contacts and a plurality of conductive layers in the first region.