公开(公告)号：US20230025163A1

公开(公告)日：2023-01-26

申请号：US17404939

申请日：2021-08-17

Applicant: United Microelectronics Corp.

Inventor： Wen Wen Gong ,  Xiaofei Han ,  Chow Yee Lim ,  Hong Liao ,  Jun Qian

IPC: H01L21/308 ,  H01L27/11556

Abstract: A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate has a first region and a second region. A stacked structure is formed on the substrate in the first region. The stacked structure includes a first dielectric layer, a charge storage layer, a second dielectric layer, a first conductive layer, and a first hard mask layer. A dielectric material layer is formed on the substrate in the second region. A second conductive layer is formed on the dielectric material layer in the second region. A first patterned photoresist layer is formed. The first hard mask layer exposed by the first patterned photoresist layer and a portion of the dielectric material layer exposed by the first patterned photoresist layer are removed by using the first patterned photoresist layer as a mask.