公开(公告)号：US20210391262A1

公开(公告)日：2021-12-16

申请号：US16945437

申请日：2020-07-31

Applicant: United Microelectronics Corp.

Inventor： Chu Chun Chang ,  Yu Chen Chao

IPC: H01L23/532 ,  H01L23/535 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.

公开(公告)号：US11270945B2

公开(公告)日：2022-03-08

申请号：US16945437

申请日：2020-07-31

Applicant: United Microelectronics Corp.

Inventor： Chu Chun Chang ,  Yu Chen Chao

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.