公开(公告)号：US20240203785A1

公开(公告)日：2024-06-20

申请号：US18179377

申请日：2023-03-07

Applicant: United Microelectronics Corp.

Inventor： Ching-Pin Hsu ,  Shih Hung Yang ,  Chu Chun Chang ,  Kuo-Yuh Yang ,  Chia-Huei Lin

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/5283 ,  H01L29/0649

Abstract: A semiconductor device includes a conductive structure, a first dielectric layer, a second dielectric layer and a liner layer. The conductive structure is located on a substrate. The first dielectric layer covers the conductive structure and the substrate. The second dielectric layer is located on the first dielectric layer. An air gap is present in the first dielectric layer and the second dielectric layer, and is located above the conductive structure. The liner layer covers and surrounds a middle portion of the air gap.

公开(公告)号：US20210391262A1

公开(公告)日：2021-12-16

申请号：US16945437

申请日：2020-07-31

Applicant: United Microelectronics Corp.

Inventor： Chu Chun Chang ,  Yu Chen Chao

IPC: H01L23/532 ,  H01L23/535 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.

公开(公告)号：US11270945B2

公开(公告)日：2022-03-08

申请号：US16945437

申请日：2020-07-31

Applicant: United Microelectronics Corp.

Inventor： Chu Chun Chang ,  Yu Chen Chao

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.