公开(公告)号：US20030017688A1

公开(公告)日：2003-01-23

申请号：US09908702

申请日：2001-07-20

Applicant: United Microelectronics Corporation

Inventor： Chung-Jung Hsu ,  Chih-Hsien Huang

IPC: H01L021/3205 ,  H01L021/4763

CPC classification number: H01L21/321 ,  H01L21/32139 ,  Y10S438/952 ,  Y10S438/974

Abstract: A method for reducing hole defects in the polysilicon layer. The method at least includes the following steps. First of all, a semiconductor substrate is provided, a polysilicon layer is formed over the semiconductor substrate. Then, no hole defects bottom anti-reflective coating process is performed, wherein the no hole defect bottom anti-reflective coating process is selected from the group consisting of dehydration baking, hydrophobic solvent treatment, and steady baking. Finally, a bottom anti-reflective coating is formed over the polysilicon layer.

Abstract translation: 一种用于减少多晶硅层中的空穴缺陷的方法。 该方法至少包括以下步骤。 首先，提供半导体衬底，在半导体衬底上形成多晶硅层。 然后，不进行空穴缺陷底部防反射涂布工艺，其中无孔缺陷底部抗反射涂覆工艺选自脱水烘烤，疏水溶剂处理和稳定烘烤。 最后，在多晶硅层上形成底部抗反射涂层。