公开(公告)号：US20150093893A1

公开(公告)日：2015-04-02

申请号：US14044855

申请日：2013-10-02

Applicant: United Microelectronics Corporation

Inventor： Yi-Fang Tao ,  Ching-Wei Hsu ,  Hsin-Yu Chen ,  Tsun-Min Cheng ,  Yung-Chien Kung ,  Chi-Mao Hsu ,  Guo-Wei Chen ,  Huei-Ru Tsai ,  Jia-Rong Li

IPC: H01L21/768

CPC classification number: H01L21/76864 ,  H01L21/76873 ,  H01L21/76882

Abstract: In a process of forming a seed layer, particularly in a vertical trench or via, a semiconductor substrate having a dielectric structure and a hard mask structure thereon is provided. An opening is formed in the hard mask structure, and a trench or via is formed in the dielectric structure in communication with the opening, wherein an area of the opening is greater than that of an entrance of the trench or via. A seed layer is then deposited in the trench or via through the opening, and then subjected to a reflow process.

Abstract translation: 在形成种子层的过程中，特别是在垂直沟槽或通孔中，提供了具有电介质结构和硬掩模结构的半导体衬底。 在硬掩模结构中形成开口，并且在与开口连通的电介质结构中形成沟槽或通孔，其中开口的面积大于沟槽或通孔的入口面积。 然后将种子层沉积在沟槽或通孔中通过开口，然后进行回流处理。