公开(公告)号：US08703577B1

公开(公告)日：2014-04-22

申请号：US13717638

申请日：2012-12-17

Applicant: United Microelectronics Corporation

Inventor： Meng-Kai Zhu

IPC: H01L21/31 ,  H01L21/311 ,  H01L21/76

CPC classification number: H01L21/3083 ,  H01L21/3081 ,  H01L21/76224

Abstract: A method for fabricating a deep trench isolation structure, wherein the method comprising steps as follows: A first hard mask layer, a second hard mask layer and a third hard mask layer are firstly formed in sequence on a substrate. The third hard mask layer is then patterned using the second hard mask layer as an etching stop layer. Subsequently, a trench etching process is performed using the patterned third hard mask layer as a mask to form a deep trench in the substrate.

Abstract translation: 一种制造深沟槽隔离结构的方法，其中该方法包括以下步骤：首先在衬底上依次形成第一硬掩模层，第二硬掩模层和第三硬掩模层。 然后使用第二硬掩模层作为蚀刻停止层来图案化第三硬掩模层。 随后，使用图案化的第三硬掩模层作为掩模进行沟槽蚀刻工艺，以在衬底中形成深沟槽。