公开(公告)号：US09431527B1

公开(公告)日：2016-08-30

申请号：US14979488

申请日：2015-12-27

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong Luo ,  Jiayun Xiong ,  Chao Yang ,  Jie Wei ,  Junfeng Wu ,  Fu Peng ,  Bo Zhang

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/205

CPC classification number: H01L29/41775 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/7786

Abstract: An enhancement mode HEMT, including: a substrate layer; a buffer layer; barrier layers; drain electrodes; reverse polarization semiconductor layers; source electrodes; an insulated gate dielectric; and a metal gate electrode The buffer layer is disposed on the substrate layer, and the barrier layers are disposed on the buffer layer. Interfaces between the buffer layer and the barrier layers are provided with first heterojunctions having a two-dimensional electron gas (2DEG) channel. The drain electrodes are disposed at one end of the upper surfaces of the barrier layers and form Ohmic contact with the barrier layers. The reverse polarization semiconductor layers are disposed on the upper surfaces of the barrier layers and are able to produce inversed polarization with the barrier layers. The interfaces between reverse polarization semiconductor layers and barrier layers are provided with second heterojunctions having two-dimensional hole gas (2DHG).

Abstract translation: 一种增强型HEMT，包括：衬底层; 缓冲层; 屏障层; 漏电极; 反向偏振半导体层; 源极; 绝缘栅电介质; 和金属栅电极缓冲层设置在基板层上，阻挡层设置在缓冲层上。 缓冲层和阻挡层之间的接口设置有具有二维电子气（2DEG）通道的第一异质结。 漏电极设置在阻挡层的上表面的一端并与阻挡层形成欧姆接触。 反向偏振半导体层设置在阻挡层的上表面上并且能够产生具有阻挡层的反偏极化。 反向偏振半导体层和阻挡层之间的界面设置有具有二维空穴气体（2DHG）的第二异质结。

公开(公告)号：US10304931B2

公开(公告)日：2019-05-28

申请号：US15623371

申请日：2017-06-14

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong Luo ,  Fu Peng ,  Chao Yang ,  Jie Wei ,  Siyu Deng ,  Dongfa Ouyang ,  Bo Zhang

IPC: H01L29/06 ,  H01L29/15 ,  H01L29/207 ,  H01L29/423 ,  H01L29/78 ,  H01L29/10 ,  H01L29/20 ,  H01L29/778

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.