公开(公告)号：US20210104601A1

公开(公告)日：2021-04-08

申请号：US17084665

申请日：2020-10-30

Applicant: University of Electronic Science and Technology of China

Inventor： Qian LUO ,  Xuanqing JIANG ,  Houdong WEN ,  Siyuan MENG

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/66

Abstract: A high-voltage n-channel high electron mobility transistor (HEMT) device is provided. In view of a relatively high process difficulty in preparing super junctions on heterojunction devices such as HEMT, the high-voltage n-channel HEMT device provides a surface super junction structure for an n-channel HEMT device. A comb-finger-shaped p-type semiconductor strip block is prepared on a surface of a drift region of the high-voltage n-channel HEMT device, and the p-type semiconductor strip block is electrically connected to a source electrode, so that large-range depletion of a channel of the drift region is realized under a turn-off condition, and a depletion region tolerates a high voltage, thus enhancing a breakdown characteristic of the high-voltage re-channel HEMT device.