公开(公告)号：US20220149803A1

公开(公告)日：2022-05-12

申请号：US17438885

申请日：2019-11-13

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Yao SHUAI ,  Chuangui WU ,  Wenbo LUO

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/17

Abstract: Provided in the present invention are a cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer, and a preparation method therefor, comprising the following steps: taking a piezoelectric single crystal wafer subjected to ion implantation and having a bottom electrode, and forming a cavity on the side of the piezoelectric single crystal wafer having the bottom electrode; then taking a substrate, and bonding the substrate to the side of the piezoelectric single crystal wafer having the cavity; performing heat treatment on the bonded intermediate product to peel off the thin film of the piezoelectric single crystal wafer; and producing a top electrode on the peeled side of the piezoelectric single crystal wafer. The preparation method for the cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer set forth in the present invention does not require the growth of a sacrificial layer, and does not perform etching and hole-forming on the thin film; the mechanical strength of the device is increased, and the thin film is not easily damaged; the cavity structure is formed before film forming, yield is high, and residue from etching is not left after film forming, there being no need to consider the effect of incomplete release on the device.

公开(公告)号：US20220321078A1

公开(公告)日：2022-10-06

申请号：US17608744

申请日：2019-11-13

Applicant: University of Electronic Science and Technology of China

Inventor： Yao SHUAI ,  Chuangui WU ,  Wenbo LUO

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/17

Abstract: The present invention provides a preparation method of solid reflection-type bulk acoustic resonator, including the following steps: taking a piece of ion-implanted piezoelectric material, growing reflecting layers below the implantation face of the piezoelectric material and/or above the substrate, then taking a substrate, and bonding it to the piezoelectric material; heating the bonded intermediate product gained to strip the film from the piezoelectric material and growing an upper electrode on the stripped side of the piezoelectric material. According to the preparation method of solid reflection-type bulk acoustic resonator disclosed in the present invention, resonators with high strength and good performance can be prepared by using wafer bonding and lay transfer technique for preparing high-quality piezoelectric films and combining the solid reflecting layer structure.