公开(公告)号：US20240055489A1

公开(公告)日：2024-02-15

申请号：US17994027

申请日：2022-11-25

Applicant: University of Electronic Science and Technology of China

Inventor： Bo ZHANG ,  Lingying WU ,  Yuting LIU ,  Wentong ZHANG ,  Zhaoji LI

IPC: H01L29/40 ,  H01L29/423

CPC classification number: H01L29/407 ,  H01L29/404 ,  H01L29/4238

Abstract: A homogenization field device with low specific on-resistance based on multidimensional coupled voltage dividing mechanism includes a first conductive type semiconductor substrate, a first conductive type well region, a first conductive type semiconductor contact region, a second conductive type drift region, a second conductive type well region, a second conductive type semiconductor contact region, a first dielectric oxide layer, a second dielectric oxide layer, a third dielectric oxide layer, a fourth dielectric oxide layer, a polycrystalline silicon electrode of a floating field plate, a polycrystalline silicon electrode of a control gate, a first layer of metal strips and a second layer of metal strips. The first dielectric oxide layer and the polycrystalline silicon electrode of the floating field plate form a vertical floating field plate, and the first layer of metal strips, the second layer of metal strips and the fourth dielectric oxide layer form a surface fixed dielectric capacitor.