公开(公告)号：US11442295B2

公开(公告)日：2022-09-13

申请号：US16858750

申请日：2020-04-27

Applicant: University of Electronic Science and Technology of China

Inventor： Yaxin Zhang ,  Shixiong Liang ,  Xilin Zhang ,  Ziqiang Yang Yang ,  Zhihong Feng

IPC: G02F1/025 ,  G02F1/00 ,  H01Q13/20 ,  H04B10/90 ,  H03C7/02 ,  H01P3/12 ,  H04B10/50

Abstract: A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz.

公开(公告)号：US09590739B2

公开(公告)日：2017-03-07

申请号：US14892578

申请日：2014-05-20

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Yaxin Zhang ,  Shen Qiao ,  Shixiong Liang ,  Ziqiang Yang ,  Zhihong Feng

IPC: H01L29/66 ,  H04B10/516 ,  H04B10/90 ,  H04B10/50

CPC classification number: H04B10/516 ,  H04B10/501 ,  H04B10/90

Abstract: Terahertz external modulator based on high electron mobility transistors belongs to the field of electromagnetic functional devices technology. This invention includes the semiconductor substrate (1), the epitaxial layer (2), and the modulation-unit array (4). The epitaxial layer (2) is set on the semiconductor substrate (1). The modulation-unit (4), the positive electrode (3), and the negative electrode (5) are all set on the epitaxial layer (2). The modulation-unit array includes at least three units with each of them is composed of high electron mobility transistors and metamaterial-structure. The gates of transistors connect to the negative electrode (5), and the sources and drains connect to the positive electrode (3). This invention is used for manipulation of spatial transmission terahertz waves. It could be operated at room temperatures, normal pressures, and non-vacuum condition. It does not need to load on the waveguide, thus is easy to package and use.

Abstract translation: 基于高电子迁移率晶体管的太赫兹外部调制器属于电磁功能器件技术领域。 本发明包括半导体衬底（1），外延层（2）和调制单元阵列（4）。 外延层（2）设置在半导体衬底（1）上。 调制单元（4），正极（3）和负极（5）全部设置在外延层（2）上。 调制单元阵列包括至少三个单元，每个单元由高电子迁移率晶体管和超材料结构组成。 晶体管的栅极连接到负极（5），源极和漏极连接到正极（3）。 本发明用于空间传输太赫兹波的操纵。 它可以在室温，正常压力和非真空条件下运行。 它不需要加载在波导上，因此易于封装和使用。

公开(公告)号：US11822162B2

公开(公告)日：2023-11-21

申请号：US16856054

申请日：2020-04-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yaxin Zhang ,  Shixiong Liang ,  Xilin Zhang ,  Ziqiang Yang Yang ,  Zhihong Feng

IPC: G02F1/015

CPC classification number: G02F1/015 ,  G02F2203/13

Abstract: A wideband terahertz modulator based on gradual openings, which belongs to the technical field of electromagnetic functional devices, includes: a semiconductor substrate; an epitaxial layer provided on the semiconductor substrate; a modulation units array, a positive voltage loading electrode and a negative voltage loading electrode which are provided on the epitaxial layer; wherein each modulation unit in the modulation units array comprises a disconnected H-shaped structure, a metal electrode located below an end of the opening of the disconnected H-shaped structure, and a semiconductor doped heterostructure located below the opening of the disconnected H-shaped structure; wherein in the disconnected H-shaped structures, adjacent modulation units have different opening positions; in a same row, the opening positions are linearly distributed and have a certain slope, and inclination slopes of the opening positions of two adjacent rows are opposite.