公开(公告)号：US20200259235A1

公开(公告)日：2020-08-13

申请号：US16858750

申请日：2020-04-27

Applicant: University of Electronics Science and Technology of China

Inventor： Yaxin Zhang ,  Shixiong Liang ,  Xilin Zhang ,  Ziqiang Yang Yang ,  Zhihong Feng

IPC: H01P5/18 ,  H01Q13/20 ,  H04B10/90 ,  G02F1/00

Abstract: A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz. The invention can be realized by using micro-processing technology, and the preparation process is mature and reliable.

公开(公告)号：US20200249503A1

公开(公告)日：2020-08-06

申请号：US16856054

申请日：2020-04-23

Applicant: University of Electronics Science and Technology of China

Inventor： Yaxin Zhang ,  Shixiong Liang ,  Xilin Zhang ,  Ziqiang Yang Yang ,  Zhihong Feng

IPC: G02F1/015

Abstract: A wideband terahertz modulator based on gradual openings, which belongs to the technical field of electromagnetic functional devices, includes: a semiconductor substrate; an epitaxial layer provided on the semiconductor substrate; a modulation units array, a positive voltage loading electrode and a negative voltage loading electrode which are provided on the epitaxial layer; wherein each modulation unit in the modulation units array comprises a disconnected H-shaped structure, a metal electrode located below an end of the opening of the disconnected H-shaped structure, and a semiconductor doped heterostructure located below the opening of the disconnected H-shaped structure; wherein in the disconnected H-shaped structures, adjacent modulation units have different opening positions; in a same row, the opening positions are linearly distributed and have a certain slope, and inclination slopes of the opening positions of two adjacent rows are opposite.