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公开(公告)号：US20190385841A1
公开(公告)日：2019-12-19
申请号：US16261282
申请日：2019-01-29
Applicant: University of Exeter
Inventor： Freddie Withers , Saverio Russo , Monica Craciun , Matt Barnes , Adolfo de Sanctis , Namphung Peimyoo
IPC: H01L21/02
Abstract: The present invention relates to a method for the manufacture of a device, such as a van der Waals heterostructure device, comprising a layer of an oxide of hafnium, tantalum, zirconium, niobium, tin or rhenium, and to a device comprising the same.
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