公开(公告)号：US10768529B2

公开(公告)日：2020-09-08

申请号：US16338088

申请日：2017-08-23

申请人： V TECHNOLOGY CO., LTD.

发明人： Takumi Togashi ,  Tomonori Harada

IPC分类号： G03F7/20 ,  G03F9/00 ,  G03F1/42

摘要： A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.