公开(公告)号：US20210404051A1

公开(公告)日：2021-12-30

申请号：US17475027

申请日：2021-09-14

申请人： VEECO INSTRUMENTS, INC.

发明人： Narasimhan SRINIVASAN ,  Tania HENRY ,  Frank CERIO ,  Paul TURNER ,  Vincent IP ,  Rutvik MEHTA

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/3205

摘要： Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.

公开(公告)号：US20240102150A1

公开(公告)日：2024-03-28

申请号：US18467549

申请日：2023-09-14

申请人： VEECO INSTRUMENTS INC.

发明人： Rutvik J. MEHTA ,  Yuejing WANG ,  Robert CALDWELL ,  Frank CERIO

IPC分类号： C23C14/22 ,  C23C14/14

CPC分类号： C23C14/221 ,  C23C14/14

摘要： Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

公开(公告)号：US20240093356A1

公开(公告)日：2024-03-21

申请号：US18522193

申请日：2023-11-28

申请人： VEECO INSTRUMENTS INC.

发明人： Narasimhan SRINIVASAN ,  Tania HENRY ,  Frank CERIO ,  Paul TURNER ,  Vincent IP ,  Rutvik MEHTA

IPC分类号： C23C14/34 ,  C23C14/16 ,  H01J37/34

CPC分类号： C23C14/3442 ,  C23C14/16 ,  H01J37/3426

摘要： Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.

公开(公告)号：US20210292889A1

公开(公告)日：2021-09-23

申请号：US17197885

申请日：2021-03-10

申请人： VEECO INSTRUMENTS, INC.

发明人： Narasimhan SRINIVASAN ,  Tania HENRY ,  Frank CERIO ,  Paul TURNER ,  Vincent IP ,  Rutvik MEHTA

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/16

摘要： Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.