公开(公告)号：US11442207B2

公开(公告)日：2022-09-13

申请号：US16778631

申请日：2020-01-31

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi ,  Robert Masci

IPC: G02B5/18 ,  G11B7/1372 ,  G11B7/1353 ,  H01J37/30

Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.

公开(公告)号：US11016228B2

公开(公告)日：2021-05-25

申请号：US16785612

申请日：2020-02-09

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi ,  Robert Masci

IPC: G02B5/18 ,  G02B6/136 ,  G11B7/1372 ,  G11B7/1353

Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.

公开(公告)号：US20200233125A1

公开(公告)日：2020-07-23

申请号：US16785612

申请日：2020-02-09

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi ,  Robert Masci

IPC: G02B5/18 ,  G11B7/1372 ,  G11B7/1353

Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.

公开(公告)号：US20200096870A1

公开(公告)日：2020-03-26

申请号：US16691739

申请日：2019-11-22

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Tristan Y. Ma ,  Huixiong Dai ,  Anthony Renau ,  John Hautala ,  Joseph Olson

IPC: G03F7/38 ,  G03F7/20 ,  G03F7/16 ,  G03F7/004

Abstract: A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

公开(公告)号：US10598832B2

公开(公告)日：2020-03-24

申请号：US15865943

申请日：2018-01-09

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi ,  Robert Masci

IPC: G02B5/18 ,  G02B6/136 ,  G11B7/1372 ,  G11B7/1353

Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.

公开(公告)号：US10990014B2

公开(公告)日：2021-04-27

申请号：US16691739

申请日：2019-11-22

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Tristan Y. Ma ,  Huixiong Dai ,  Anthony Renau ,  John Hautala ,  Joseph Olson

IPC: G03F7/38 ,  G03F7/20 ,  G03F7/16 ,  G03F7/004 ,  G03F7/09

Abstract: A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

公开(公告)号：US10761334B2

公开(公告)日：2020-09-01

申请号：US16035506

申请日：2018-07-13

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi

IPC: G02B5/18 ,  G02B27/09 ,  G02B27/01

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an etch stop layer atop a substrate, and providing an optical grating layer atop the etch stop layer. The method may further include providing a patterned mask layer over the optical grating layer, and etching the optical grating layer and the patterned mask layer to form an optical grating in the optical grating layer. The optical grating may include a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the etching forms an area of over-etch in the etch stop layer between the plurality of angled components.

公开(公告)号：US20190056914A1

公开(公告)日：2019-02-21

申请号：US15786806

申请日：2017-10-18

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Tristan Y. Ma ,  Huixiong Dai ,  Anthony Renau ,  John Hautala ,  Joseph Olson

IPC: G06F7/38 ,  G03F7/20

Abstract: A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

公开(公告)号：US20200271944A1

公开(公告)日：2020-08-27

申请号：US16870668

申请日：2020-05-08

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi

IPC: G02B27/42 ,  G02B27/01 ,  G02B5/18

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optically transparent substrate, and forming an optical grating layer on the substrate. The method includes forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. A first sidewall of the optical grating may have a first angle, and a second sidewall of the grating has a second angle different than the first angle. Modifying process parameters, including selectivity and beam angle spread, has an effect of changing a shape or dimension of the plurality of angled components.

公开(公告)号：US20200018985A1

公开(公告)日：2020-01-16

申请号：US16035498

申请日：2018-07-13

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph Olson ,  Peter Kurunczi

IPC: G02B27/42 ,  G02B5/18 ,  G02B27/01

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optically transparent substrate, and forming an optical grating layer on the substrate. The method includes forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. A first sidewall of the optical grating may have a first angle, and a second sidewall of the grating has a second angle different than the first angle. Modifying process parameters, including selectivity and beam angle spread, has an effect of changing a shape or dimension of the plurality of angled components.