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1.发明申请PLANARIZED MAGNETIC RECORDING DISK WITH PRE-PATTERNED SURFACE FEATURES AND SECURE ADHESION OF PLANARIZING FILL MATERIAL AND METHOD FOR PLANARIZING THE DISK 有权具有预先设计的表面特征的平面磁记录盘和平面填充材料的安全粘合以及用于平面盘的方法公开(公告)号：US20120107646A1
公开(公告)日：2012-05-03
申请号：US12914647
申请日：2010-10-28
摘要： A magnetic recording disk has surface features of elevated lands and recessed grooves, and a planarized upper surface. A chemical-mechanical-polishing (CMP) stop layer is deposited over the lands and into the recesses. An adhesion film, like silicon, is deposited over the CMP stop layer, and fill material containing a silicon oxide (SiOx) is deposited over and in contact with the adhesion film. The adhesion film improves the adhesion of the SiOx fill material and prevents delamination during a subsequent two-step CMP planarizing process.
摘要翻译： 磁记录盘具有升高的平台和凹槽的表面特征以及平坦化的上表面。 化学机械抛光（CMP）停止层沉积在焊盘上并进入凹槽中。 在CMP停止层上沉积粘附膜，如硅，并且将含有氧化硅（SiOx）的填充材料沉积在粘合膜上并与粘合膜接触。 粘合膜改善了SiOx填充材料的粘合性，并且防止了随后的两步CMP平坦化过程中的分层。
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2.发明授权Planarized magnetic recording disk with pre-patterned surface features and secure adhesion of planarizing fill material and method for planarizing the disk 有权具有预先图案化的表面特征和平坦化填充材料的牢固粘附的平面化磁记录盘以及用于平坦化盘的方法公开(公告)号：US08252437B2
公开(公告)日：2012-08-28
申请号：US12914647
申请日：2010-10-28
IPC分类号： G11B5/66
摘要： A magnetic recording disk has surface features of elevated lands and recessed grooves, and a planarized upper surface. A chemical-mechanical-polishing (CMP) stop layer is deposited over the lands and into the recesses. An adhesion film, like silicon, is deposited over the CMP stop layer, and fill material containing a silicon oxide (SiOx) is deposited over and in contact with the adhesion film. The adhesion film improves the adhesion of the SiOx fill material and prevents delamination during a subsequent two-step CMP planarizing process.
摘要翻译： 磁记录盘具有升高的平台和凹槽的表面特征以及平坦化的上表面。 化学机械抛光（CMP）停止层沉积在焊盘上并进入凹槽中。 在CMP停止层上沉积粘附膜，如硅，并且将含有氧化硅（SiOx）的填充材料沉积在粘合膜上并与粘合膜接触。 粘合膜改善了SiOx填充材料的粘合性，并且防止了随后的两步CMP平坦化过程中的分层。
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3.发明申请METALLIZED SILICON SUBSTRATE FOR INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODE 审中-公开用于氮化钠发光二极管的金属化硅基板公开(公告)号：US20090283747A1
公开(公告)日：2009-11-19
申请号：US12424517
申请日：2009-04-15
CPC分类号： H01L33/007 , H01L33/12
摘要： A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer.
摘要翻译： 一种发光二极管，其具有金属化硅基板，该金属化硅基板包括硅基底，设置在硅基底上的缓冲层，设置在该缓冲层上的金属层以及设置在该金属层上的发光层。 缓冲层可以是AlN，和金属层ZrN。 发光层可以包括GaN和InGaN。 金属化硅基板还可以包括设置在金属层上的防氧化层。 氧化防止层可以是AlN。 发光二极管可以使用有机金属气相外延工艺形成。 中间ZrN / AlN层能够使用常规的有机金属气相外延在硅衬底上外延生长GaN。 ZrN层提供了一个整体的后向反射器，与n-GaN的欧姆接触。 AlN层提供反应势垒，导热界面层和电隔离层。
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