公开(公告)号：US20220321791A1

公开(公告)日：2022-10-06

申请号：US17405518

申请日：2021-08-18

Applicant: VisEra Technologies Company Limited

Inventor： Cheng-Hsuan LIN ,  Zong-Ru TU ,  Yu-Chi CHANG ,  Han-Lin WU ,  Hung-Jen TSAI

IPC: H04N5/232

Abstract: A solid-state image sensor having a first region and a second region adjacent to the first region along a first direction is provided. The solid-state image sensor includes a first unit pattern disposed in the first region. The solid-state image sensor also includes a second unit pattern disposed in the second region and corresponding to the first unit pattern. The first unit pattern and the second unit pattern each includes normal pixels and an auto-focus pixel array. The normal pixels and the auto-focus pixel array in the first unit pattern form a first arrangement, the normal pixels and the auto-focus pixel array in the second unit pattern form a second arrangement, and the first arrangement and the second arrangement are symmetric with respect to the first axis of symmetry.

公开(公告)号：US20230110102A1

公开(公告)日：2023-04-13

申请号：US17496472

申请日：2021-10-07

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Cheng-Hsuan LIN ,  Zong-Ru TU ,  Yu-Chi CHANG ,  Han-Lin WU

IPC: H01L27/146 ,  H04N5/369

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

公开(公告)号：US20220246657A1

公开(公告)日：2022-08-04

申请号：US17164114

申请日：2021-02-01

Applicant: VisEra Technologies Company Limited

Inventor： Cheng-Hsuan LIN ,  Yu-Chi CHANG ,  Zong-Ru TU

IPC: H01L27/146

Abstract: The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.

公开(公告)号：US20220181370A1

公开(公告)日：2022-06-09

申请号：US17116700

申请日：2020-12-09

Applicant: VisEra Technologies Company Limited

Inventor： Cheng-Hsuan LIN ,  Yu-Chi CHANG

IPC: H01L27/146 ,  G02B7/36

Abstract: An image sensor includes: a group of autofocus sensor units; neighboring sensor units adjacent to and surrounding the group of autofocus sensor units, wherein each of the neighboring sensor units has a first side close to the group of autofocus sensor units, and a second side away from the group of autofocus sensor units. The image sensor further includes: a first light shielding structure disposed between the group of autofocus sensor units and the neighboring sensor units; a first extra light shielding structure laterally extending from the first light shielding structure and disposed on at least one of the first side and the second side of one or more of the neighboring sensor units.

公开(公告)号：US20210288090A1

公开(公告)日：2021-09-16

申请号：US16814237

申请日：2020-03-10

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Yu-Chi CHANG ,  Cheng-Hsuan LIN ,  Han-Lin WU

IPC: H01L27/146

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.