公开(公告)号：US20230343808A1

公开(公告)日：2023-10-26

申请号：US17726202

申请日：2022-04-21

Applicant: VisEra Technologies Company Limited

Inventor： Chun-Yuan WANG ,  Ching-Hua LI ,  Zong-Ru TU ,  Yu-Chi CHANG ,  Han-Lin WU ,  Hung-Jen TSAI

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1463

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor further includes a light-splitting structure disposed in the first color filter segment or the second color filter segment and a grid structure disposed between the first color filter segment and the second color filter segment. The light-splitting structure is separated from the grid structure.

公开(公告)号：US20230110102A1

公开(公告)日：2023-04-13

申请号：US17496472

申请日：2021-10-07

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Cheng-Hsuan LIN ,  Zong-Ru TU ,  Yu-Chi CHANG ,  Han-Lin WU

IPC: H01L27/146 ,  H04N5/369

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

公开(公告)号：US20220149097A1

公开(公告)日：2022-05-12

申请号：US17096018

申请日：2020-11-12

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Yu-Chi CHANG ,  Zong-Ru TU

IPC: H01L27/146

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and a second color filter layer disposed adjacent to the first color filter layer, which respectively have a plurality of first color filter segments and a plurality of second color filter segments. Moreover, the solid-state image sensor includes a first metal grid structure disposed between the first color filter layer and the second color filter layer. The solid-state image sensor also includes a second metal grid structure disposed between the first color filter segments and between the second color filter segments. The bottom of the first metal grid structure has a first grid width, and the bottom of the second metal grid structure has a second grid width narrower than the first grid width.

公开(公告)号：US20220149096A1

公开(公告)日：2022-05-12

申请号：US17094531

申请日：2020-11-10

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Yu-Chi CHANG ,  Zong-Ru TU

IPC: H01L27/146 ,  H04N5/335

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a plurality of color filter segments. The solid-state image sensor further includes a partition grid disposed between the color filter segments. Moreover, the solid-state image sensor includes a patterned structure disposed on the color filter layer. The patterned structure has a plurality of patterned segments. The solid-state image sensor also includes a transparent layer disposed on the color filter layer and the partition grid. The transparent layer surrounds the patterned segments. At least one patterned segment is disposed on the partition grid.

公开(公告)号：US20250151435A1

公开(公告)日：2025-05-08

申请号：US18501460

申请日：2023-11-03

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Chun-Yuan WANG ,  Po-Hsiang WANG ,  Han-Lin WU ,  Hung-Jen TSAI

IPC: H01L27/146

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor also includes a shielding grid structure disposed between the first color filter segment and the second color filter segment. The shielding grid structure is divided into a first shielding segment and a second shielding segment. The solid-state image sensor further includes a meta structure disposed above the color filter layer. In a top view, the second shielding segment is formed as a triangle, a rectangle, or a combination thereof.

公开(公告)号：US20230073737A1

公开(公告)日：2023-03-09

申请号：US17466297

申请日：2021-09-03

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Zong-Ru TU ,  Yu-Chi CHANG

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/42

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The solid-state image sensor also includes an isolation structure disposed between the photoelectric conversion elements. The solid-state image sensor further includes a color filter layer disposed above the semiconductor substrate and having color filter segments that correspond to the photoelectric conversion elements. Moreover, the solid-state image sensor includes an organic film disposed above the color filter layer. The solid-state image sensor also includes an upper electrode and a lower electrode respectively disposed on the upper side and the lower side of the organic film. The solid-state image sensor further includes nano-structures disposed on the upper side or the lower side of the organic film.

公开(公告)号：US20210288090A1

公开(公告)日：2021-09-16

申请号：US16814237

申请日：2020-03-10

Applicant: VisEra Technologies Company Limited

Inventor： Ching-Hua LI ,  Yu-Chi CHANG ,  Cheng-Hsuan LIN ,  Han-Lin WU

IPC: H01L27/146

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.