公开(公告)号：US3749961A

公开(公告)日：1973-07-31

申请号：US3749961D

申请日：1971-12-06

Applicant: WATKINS JOHNSON CO

Inventor： BATES D ,  LONG J ,  SILZARS A ,  ROBERTS L

IPC: H01J29/44 ,  H01L45/02 ,  H01J23/16 ,  H01J29/46 ,  H01J29/70

CPC classification number: H01L45/02 ,  H01J29/44

Abstract: An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun at one end to project an electron beam along said envelope, reverse biased semiconductor diodes forming a target at the other end of the envelope disposed to receive said beam and deflection means for deflecting the beam whereby more or less of the beam strikes the diodes forming the target.

Abstract translation: 一种电子轰击的半导体放大器，包括：在一端具有电子枪的细长外壳，沿着所述外壳突出电子束，反向偏置的半导体二极管在被设置成接收所述光束的信封的另一端处形成目标，偏转装置用于偏转 光束，其中或多或少的光束撞击形成靶的二极管。