公开(公告)号：US3740607A

公开(公告)日：1973-06-19

申请号：US3740607D

申请日：1971-06-03

Applicant: WATKINS JOHNSON CO

Inventor： SILZARS A ,  BATES D

IPC: H01J3/02 ,  H01J29/48 ,  H01J29/56

CPC classification number: H01J3/029 ,  H01J29/488

Abstract: A laminar flow electron gun for forming an electron beam including a cathode for emitting electrons, an apertured dishshaped electrode surrounding the cathode surface and an anode spaced from said cathode and electrode and cooperating therewith to provide a substantially uniform electric field at the surface of said cathode to cause electrons to emit normally from the entire surface in a beam, said anode also forming a divergent electrostatic lens along the path of the beam and accelerating and focusing means disposed further along the path of the beam to accelerate and focus the beam at a target.

Abstract translation: 用于形成包括用于发射电子的阴极的电子束的层流电子枪，围绕阴极表面的有孔的碟形电极和与所述阴极和电极间隔开的并与之配合的阳极，以在其表面处提供基本均匀的电场 所述阴极引起电子从光束中的整个表面正常发射，所述阳极还沿着光束的路径形成发散的静电透镜，并且沿着光束的路径进一步设置的加速和聚焦装置以将光束加速并聚焦在 一个目标。

公开(公告)号：US3749961A

公开(公告)日：1973-07-31

申请号：US3749961D

申请日：1971-12-06

Applicant: WATKINS JOHNSON CO

Inventor： BATES D ,  LONG J ,  SILZARS A ,  ROBERTS L

IPC: H01J29/44 ,  H01L45/02 ,  H01J23/16 ,  H01J29/46 ,  H01J29/70

CPC classification number: H01L45/02 ,  H01J29/44

Abstract: An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun at one end to project an electron beam along said envelope, reverse biased semiconductor diodes forming a target at the other end of the envelope disposed to receive said beam and deflection means for deflecting the beam whereby more or less of the beam strikes the diodes forming the target.

Abstract translation: 一种电子轰击的半导体放大器，包括：在一端具有电子枪的细长外壳，沿着所述外壳突出电子束，反向偏置的半导体二极管在被设置成接收所述光束的信封的另一端处形成目标，偏转装置用于偏转 光束，其中或多或少的光束撞击形成靶的二极管。