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1.Method of making semiconductor p-n junction stress and strain sensor 失效
Title translation: 制造半导体P-N结应力和应变传感器的方法公开(公告)号:US3549435A
公开(公告)日:1970-12-22
申请号:US3549435D
申请日:1968-08-01
Applicant: WEBB JAMES E , NASA
Inventor: WORTMAN JIMMIE J , STOCKARD RALPH R
CPC classification number: H01L29/00 , H01L29/84 , Y10S438/978
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公开(公告)号:US3432730A
公开(公告)日:1969-03-11
申请号:US3432730D
申请日:1966-09-06
Applicant: WEBB JAMES E , NASA
Inventor: WORTMAN JIMMIE J , STOCKARD RALPH R
CPC classification number: H01L29/00 , H01L29/84 , Y10S438/978
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