公开(公告)号：US20240258400A1

公开(公告)日：2024-08-01

申请号：US18601289

申请日：2024-03-11

申请人： Honeywell Federal Manufacturing & Technologies, LLC

发明人： Erik Joseph Timpson ,  Justin M. Schlitzer ,  Thomas Matthew Selter ,  Michael Walsh

IPC分类号： H01L29/51 ,  H01L29/49 ,  H01L29/84 ,  H01L29/868

CPC分类号： H01L29/51 ,  H01L29/4916 ,  H01L29/84 ,  H01L29/868

摘要： Systems and methods for building passive and active electronics with diamond-like carbon (DLC) coatings are provided herein. DLC may be layered upon substrates to form various components of electronic devices. Passive components such as resistors, capacitors, and inductors may be built using DLC as a dielectric or as an insulating layer. Active components such as diodes and transistors may be built with the DLC acting substantially like a semiconductor. The amount of sp2and sp3 bonded carbon atoms may be varied to modify the properties of the DLC for various electronic components.

公开(公告)号：US11796408B2

公开(公告)日：2023-10-24

申请号：US17267094

申请日：2019-08-28

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Genki Yoshikawa ,  Takahiro Nemoto ,  Makito Nakatsu ,  Naoto Takeda ,  Kota Shiba ,  Kosuke Minami

IPC分类号： G01L1/00 ,  G01L1/26 ,  B08B7/00 ,  G01L1/22 ,  H01L29/84

CPC分类号： G01L1/26 ,  B08B7/005 ,  B08B7/0071 ,  G01L1/2268 ,  H01L29/84

摘要： A method for cleaning a receptor layer of a surface stress sensor according to an embodiment of the present invention includes, in a surface stress sensor that detects a change in surface stress of a thin film, the change being caused by a receptor layer disposed on a surface of the thin film, causing at least a part of a surface region of the thin film to generate heat or supplying heat to the receptor layer from the outside of the surface stress sensor. This makes it possible to easily perform efficient cleaning of a surface stress sensor such as a sensor that performs detection using a piezoresistor while avoiding structural complications as much as possible.

公开(公告)号：US11699672B2

公开(公告)日：2023-07-11

申请号：US17371586

申请日：2021-07-09

申请人： DENSO CORPORATION

发明人： Mariko Fujieda ,  Kazuaki Mawatari ,  Shinji Kawano

IPC分类号： H01L23/00 ,  G01L19/06 ,  H01L29/84 ,  G01L9/00

CPC分类号： H01L24/08 ,  G01L9/00 ,  G01L19/06 ,  H01L24/03 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/84 ,  H01L2224/04042 ,  H01L2224/48091 ,  H01L2224/73215 ,  H01L2224/8592

摘要： A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

公开(公告)号：US20180231424A1

公开(公告)日：2018-08-16

申请号：US15649934

申请日：2017-07-14

申请人： Texas Instruments Incorporated ,  Texas Instruments Deutschland, GMBH

发明人： Umidjon Nurmetov ,  Ralf Peter Brederlow ,  Baher Haroun

IPC分类号： G01L1/22 ,  H01L27/06 ,  G01L1/16 ,  H01L29/84 ,  G01L5/16 ,  H01L27/22 ,  G01L25/00

CPC分类号： G01L1/2293 ,  G01L1/162 ,  G01L1/2281 ,  G01L5/162 ,  G01L25/006 ,  H01L22/34 ,  H01L27/0647 ,  H01L27/0802 ,  H01L27/22 ,  H01L29/84 ,  H01L29/8605

摘要： An integrated circuit (IC) chip includes a substrate of a piezo-electric material having a first resistivity coefficient associated with a first direction that is longitudinal to a first crystal axis and a second resistivity coefficient associated with a second direction that is transverse to the first crystal axis. The first and second resistivity coefficients have opposite signs. The IC chip also includes a first stress sensing element formed in the substrate and coupled to pass a first current therethrough. The first stress sensing element includes a first resistor aligned such that the major direction of current flow through the first resistor is in the first direction and a second resistor coupled in series with the first resistor and aligned such that the major direction of current flow through the second resistor is in the second direction. A ratio of the resistance of the second resistor to the resistance of the first resistor is equal to a value α, where α is equal to the ratio of the first resistivity coefficient to the second resistivity coefficient.

公开(公告)号：US10036675B2

公开(公告)日：2018-07-31

申请号：US15209350

申请日：2016-07-13

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xueyan Tian

IPC分类号： G01L1/16 ,  H01L29/786 ,  H01L29/84 ,  H01L51/00 ,  G01L1/22 ,  H01L27/20 ,  H01L41/113 ,  H01L41/253 ,  H01L41/187 ,  H01L41/318

CPC分类号： G01L1/16 ,  G01L1/2293 ,  H01L27/20 ,  H01L29/786 ,  H01L29/84 ,  H01L41/1132 ,  H01L41/1871 ,  H01L41/1876 ,  H01L41/253 ,  H01L41/318 ,  H01L51/0027 ,  H01L51/0048

摘要： The present disclosure provides a piezoelectric film sensor, a piezoelectric film sensor circuit and methods for manufacturing the same. The method for manufacturing the piezoelectric film sensor comprises: a step of forming a piezoelectric film on a substrate, and a step of subjecting the piezoelectric film to laser annealing using a laser annealing process so as to complete phase-forming transition of the piezoelectric film. Since the annealing temperature in the laser annealing process can be controlled in a range of 300° C. to 400° C., the manufacturing process can be not only applied to ensure a good performance of a piezoelectric film, but also can be used for manufacturing a flexible piezoelectric film sensor.

公开(公告)号：US20180182902A1

公开(公告)日：2018-06-28

申请号：US15892028

申请日：2018-02-08

申请人： STMICROELECTRONICS, INC.

发明人： Qing LIU ,  John H. ZHANG

IPC分类号： H01L29/84 ,  H01H49/00 ,  B82B3/00 ,  H01H1/00 ,  H01H59/00 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L29/84 ,  B82B3/00 ,  H01H1/0094 ,  H01H49/00 ,  H01H50/005 ,  H01H59/0009 ,  H01H2001/0084 ,  H01L21/02532 ,  H01L21/30608

摘要： An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 μm2.

公开(公告)号：US09972724B2

公开(公告)日：2018-05-15

申请号：US15536716

申请日：2016-01-07

申请人： DENSO CORPORATION

发明人： Kiyomasa Sugimoto

IPC分类号： G01P15/125 ,  H01L29/84 ,  G01P15/18 ,  G01P15/08

CPC分类号： H01L29/84 ,  B81B2201/0235 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0842

摘要： An acceleration sensor includes: a semiconductor substrate that includes a support substrate and a semiconductor layer; a first-direction movable electrode; a second-direction movable electrode; a first-direction fixed electrode; a second-direction fixed electrode; and a support member. The acceleration sensor is configured to detect acceleration in a first direction in the surface direction of the semiconductor substrate and acceleration in a second direction orthogonal to the first direction and parallel to the surface direction. The first-direction movable electrode and the first-direction fixed electrode are provided such that an angle formed by an extended direction of the first-direction movable electrode and the first-direction fixed electrode and the second direction is sin−1(d/L)[deg], and the second-direction movable electrode and the second-direction fixed electrode are provided such that an angle formed by an extended direction of the second-direction movable electrode and the second-direction fixed electrode and the first direction is sin−1(d/L)[deg].

公开(公告)号：US20180127267A1

公开(公告)日：2018-05-10

申请号：US15864787

申请日：2018-01-08

申请人： Infineon Technologies AG

发明人： Bernhard Winkler ,  Rainer Leuschner ,  Horst Theuss

IPC分类号： B81B7/00 ,  G01L19/14 ,  G01L9/00 ,  H01L29/84 ,  G01L15/00

CPC分类号： B81B7/0058 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/015 ,  B81C2203/0154 ,  G01L9/0054 ,  G01L15/00 ,  G01L19/141 ,  G01L19/148 ,  H01L29/84 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.

公开(公告)号：US20180109203A1

公开(公告)日：2018-04-19

申请号：US15846727

申请日：2017-12-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H02N1/00 ,  H01L29/84 ,  H01L21/311 ,  H01L21/50 ,  H01L21/768 ,  H01L21/02 ,  B81C1/00

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.

公开(公告)号：US09926193B2

公开(公告)日：2018-03-27

申请号：US15301337

申请日：2014-06-27

申请人： Intel Corporation

发明人： Jorge A. Munoz ,  Dmitri E. Nikonov ,  Kelin J. Kuhn ,  Patrick Theofanis ,  Chytra Pawashe ,  Kevin Lin ,  Seiyon Kim

IPC分类号： B82B1/00 ,  B82B3/00 ,  H01L29/66 ,  H01L29/84 ,  H01L29/82 ,  H01H59/00 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y40/00

CPC分类号： B82B1/005 ,  B81B3/0016 ,  B81B7/02 ,  B81B2201/014 ,  B81B2203/0118 ,  B82B1/002 ,  B82B3/0023 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01H1/0094 ,  H01H1/54 ,  H01H59/0009 ,  H01L29/66227 ,  H01L29/82 ,  H01L29/84 ,  Y10S977/732 ,  Y10S977/838 ,  Y10S977/888 ,  Y10S977/938

摘要： Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.