CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION
    1.
    发明申请
    CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION 有权
    碳化硅铸造工艺和碳前驱体组合物

    公开(公告)号:US20120190181A1

    公开(公告)日:2012-07-26

    申请号:US13010397

    申请日:2011-01-20

    IPC分类号: H01L21/425 G21K5/00 C09K3/00

    摘要: Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.

    摘要翻译: 用于注入碳离子的方法和碳离子前体组合物通常包括在离子源中蒸发和电离包括碳氧化物和甲烷气体的气体混合物以产生等离子体并产生碳离子。 然后提取等离子体内的离子化碳以形成离子束。 用质量分析器磁体对离子束进行质量分析,以允许离子化碳通过并且植入工件中。