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公开(公告)号：US20090274454A1
公开(公告)日：2009-11-05
申请号：US12434239
申请日：2009-05-01
IPC分类号： F27B5/14
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译： 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度 多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。
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公开(公告)号：US20100193154A1
公开(公告)日：2010-08-05
申请号：US12694634
申请日：2010-01-27
IPC分类号： F28D21/00
CPC分类号： H01L21/67109 , H01L21/67115
摘要： Methods for cooling a substrate are provided herein. In some embodiments, a method for cooling a substrate includes heating a substrate in a process chamber from an introductory temperature to a peak temperature of greater than about 900 degrees Celsius; and cooling the substrate from within about 50 degrees Celsius of the peak temperature by moving the substrate at a rate of at least about 3 millimeters/second in a direction normal to an upper surface of the substrate. In some embodiments, cooling the substrate by moving the substrate further comprises moving the substrate to a first position having a first distance from an upper surface of the process chamber; and subsequently moving the substrate to a second position having a second distance that is further away from the upper surface than the first distance. In some embodiments, a residence time proximate the peak temperature is about 0.6 seconds or less.
摘要翻译： 本文提供了冷却基板的方法。 在一些实施例中，用于冷却衬底的方法包括将处理室中的衬底从介入温度加热到大于约900摄氏度的峰值温度; 并且通过在垂直于衬底的上表面的方向上以至少约3毫米/秒的速率移动衬底，从而在峰值温度的约50摄氏度内冷却衬底。 在一些实施例中，通过移动衬底来冷却衬底还包括将衬底移动到与处理室的上表面具有第一距离的第一位置; 并且随后将所述基板移动到具有比所述第一距离更远离所述上表面的第二距离的第二位置。 在一些实施方案中，接近峰值温度的停留时间为约0.6秒或更短。
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