公开(公告)号：US20210013036A1

公开(公告)日：2021-01-14

申请号：US16620503

申请日：2019-05-14

申请人： WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Yuanming MENG ,  Yu YAN

IPC分类号： H01L21/02 ,  H01L21/306 ,  C23C16/48 ,  C30B1/02

摘要： The present disclosure provides a method and system for fabricating a semiconductor device. The method and system of the present disclosure, after obtaining the polysilicon layer, first form the protective oxide layer on the surface of the polysilicon layer, and then etch the protective oxide layer and the protrusions on the surface of the polysilicon layer with the buffered oxide etchant based on controllability of the buffered oxide etchant, thereby reducing the protrusions on the surface of the polysilicon layer, while well protecting the surface of the polysilicon layer. Therefore, the technical problem of surface roughness in the existing polysilicon layers is solved.