公开(公告)号：US20220149085A1

公开(公告)日：2022-05-12

申请号：US16954253

申请日：2019-12-30

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Juncheng Xiao ,  Fei Ai ,  Guoheng Yin ,  Yong Xu

IPC: H01L27/12

Abstract: The present invention provides a TFT array substrate, a manufacturing method thereof, and a display panel thereof, wherein the thin-film transistor (TFT) array substrate is defined with a first area and a second area, and includes a substrate layer, wherein a first TFT is disposed on the substrate layer in the first area, and a second TFT is disposed on the substrate layer in the second area; and wherein the first TFT is a top-gate TFT, the second TFT is a bottom-gate TFT, and a material used for a source/drain layer of the first TFT is same as a material used for a gate layer of the second TFT. The present invention provides a TFT array substrate, which adopts a novel film structure design, so that a low temperature poly-silicon (LTPS) TFT and Oxide TFT provided thereon can have great compatibility in the design and manufacturing process.

公开(公告)号：US11315958B2

公开(公告)日：2022-04-26

申请号：US16605417

申请日：2019-09-18

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Fei Ai ,  Dewei Song ,  Guoheng Yin

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368

Abstract: An array substrate and a method of manufacturing the same are provided. The array substrate includes a substrate, a plurality of thin film transistors disposed on the substrate, and a planarization layer covering the plurality of thin film transistors and filled a region defined by the plurality of thin film transistors and the substrate.