公开(公告)号：US12046664B2

公开(公告)日：2024-07-23

申请号：US18286152

申请日：2022-05-20

申请人： WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

发明人： Pengfei Jia ,  Qiang Rui ,  Wei Li

IPC分类号： H01L29/739 ,  H01L29/08 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/7396 ,  H01L29/0856 ,  H01L29/452 ,  H01L29/66333

摘要： A vertical semiconductor structure with an integrated sampling structure and a method for manufacturing the same; the vertical semiconductor structure includes a vertical-semiconductor-structure unit cell, a sampling unit cell, a control electrode, a first electrode, a second electrode, and a sampling electrode. The sampling electrode performs real-time sampling of a voltage difference between the first electrode and the second electrode; a PN junction is formed between a first/second P-type diffusion region and a second N-type base region, which forms a potential barrier blocking electron emission from the sampling electrode. Therefore, a voltage signal of the sampling electrode is input into a protection circuit, which detects whether the vertical-semiconductor-structure unit cell is desaturated when it determines that the unit cell is in the open state. Second, a sampling resistor is connected between the sampling electrode and the first electrode to ensure the stable operation of the sampling unit cell.