公开(公告)号：US20140105805A1

公开(公告)日：2014-04-17

申请号：US14031172

申请日：2013-09-19

Applicant: Wacker Chemie AG

Inventor： Walter HAECKL ,  Norbert ELLINGER ,  Andreas HIRSCHMANN ,  Markus KAHLER ,  Uwe PAETZOLD

IPC: C01B33/107

CPC classification number: C01B33/1071

Abstract: The invention provides a process for hydrogenating silicon tetrachloride in a reactor, in which reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature of greater than 900° C. at a pressure between 4 and 15 bar, first by means of at least one heat exchanger made from graphite and then by means of at least one heating element made from SiC-coated graphite, the temperature of the heating elements being between 1150° C. and 1250° C., wherein the reactant gas includes at least one boron compound selected from the group consisting of diborane, higher boranes, boron-halogen compounds and boron-silyl compounds, the sum of the concentrations of all boron compounds being greater than 1 ppmv based on the reactant gas stream.

Abstract translation: 本发明提供一种在反应器中氢化四氯化硅的方法，其中含有氢和四氯化硅的反应物气体在4至15巴之间的压力下被加热至大于900℃的温度，首先通过至少一个 热交换器由石墨制成，然后通过由SiC涂覆的石墨制成的至少一个加热元件，加热元件的温度在1150℃和1250℃之间，其中反应气体包括至少一种硼化合物 选自乙硼烷，高级硼烷，硼 - 卤素化合物和硼 - 甲硅烷基化合物，所有硼化合物的浓度之和大于1ppmv，基于反应气流。