公开(公告)号：US20190209944A1

公开(公告)日：2019-07-11

申请号：US16354278

申请日：2019-03-15

Applicant: Wacker Chemie AG

Inventor： Maximilian AIGNER ,  Uwe PAETZOLD ,  Jan PROCHASKA

IPC: B01D3/14 ,  C01B33/107

CPC classification number: B01D3/141 ,  B01D3/143 ,  C01B33/10778

Abstract: Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.

公开(公告)号：US20160131584A1

公开(公告)日：2016-05-12

申请号：US14899147

申请日：2014-06-17

Applicant: WACKER CHEMIE AG

Inventor： Thorsten GOEBEL ,  Walter HAECKL ,  Wolfgang MUENZER ,  Uwe PAETZOLD ,  Natalia SOFINA

IPC: G01N21/65 ,  G01N21/3504 ,  C01B33/107 ,  G01N30/14

CPC classification number: G01N21/65 ,  B01D53/685 ,  B01D2251/304 ,  B01D2251/60 ,  B01D2253/112 ,  B01D2257/204 ,  B01D2257/2045 ,  B01D2258/02 ,  C01B33/10742 ,  C01B33/10763 ,  G01N21/3504 ,  G01N30/14 ,  G01N30/86 ,  G01N2201/06113 ,  G01N2201/08

Abstract: The composition of a gas or gas stream containing AlCl3 in a chemical reactor is measured by removing AlCl3 from the gas and analyzing the gas by gas chromatography or spectroscopy. Chlorosilanes may be prepared in a fluidized bed reactor having a reactor height H0, in which supplied HCl reacts with silicon, wherein a temperature profile in the fluidized bed reactor is greater than S1(H/H0)=(a1−b1)*(1/(1+exp(−c1((H/H0)−d1))))+b1 and less than S2(H/H0)=(a2−b2)*(1/(1+exp(−c2((H/H0)−d2))))+b2, where a1=100° C., a2=300° C., b1=300° C., b2=400° C., c1=50, c2=20, d1=0.2, and d2=0.8.

Abstract translation: 通过从气体中除去AlCl 3并通过气相色谱或光谱法分析气体来测量在化学反应器中含有AlCl 3的气体或气流的组成。 氯硅烷可以在具有反应器高度H 0的流化床反应器中制备，其中所提供的HCl与硅反应，其中流化床反应器中的温度分布大于S1（H / H0）=（a1-b1）*（1 /（1 + exp（-c1（（H / H0）-d1））））+ b1且小于S2（H / H0）=（a2-b2）*（1 /（1 + exp（-c2 H = H 2）-d 2））））+ b2，其中a1 = 100℃，a2 = 300℃，b1 = 300℃，b2 = 400℃，c1 = 50，c2 = d1 = 0.2，d2 = 0.8。

公开(公告)号：US20200325027A1

公开(公告)日：2020-10-15

申请号：US16753935

申请日：2017-10-05

Applicant: WACKER CHEMIE AG

Inventor： Karl-Heinz RIMBOECK ,  Uwe PAETZOLD ,  Marek SOBOTA

IPC: C01B33/107 ,  B01J23/888

Abstract: Generally unusable or difficultly useable dusts of ultrahigh purity silicon can be used to produce chlorosilanes under reasonable reaction conditions by employing a catalyst containing one or more of Co, Mo, W. The process may be incorporated into an integral plant for the production of polycrystalline silicon.

公开(公告)号：US20140105804A1

公开(公告)日：2014-04-17

申请号：US14031156

申请日：2013-09-19

Applicant: Wacker Chemie AG

Inventor： Andreas HIRSCHMANN ,  Walter HAECKL ,  Uwe PAETZOLD

IPC: C01B33/107

CPC classification number: C01B33/1071 ,  B01J4/005 ,  B01J2219/00063 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/002 ,  B01J2219/00238

Abstract: The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500° C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process.

Abstract translation: 本发明提供了一种反应器中的吸热气相反应方法，其中将反应气体通过气体入口装置引入反应器中，并通过气体分配装置均匀地分配到加热区中，其中将反应气体加热到 加热区通过加热元件平均温度为500-1500℃，然后进入反应区，反应气体在反应区中反应，得到产物气体，其通过气体从反应器中导出 出口设备。 本发明的另外的主题涉及反应器中吸热气相反应的方法，其中通过反应区中的温度测量来控制加热元件的加热，为此目的在反应区中存在至少两个温度传感器 ，和反应器，用于执行该过程。

公开(公告)号：US20210087066A1

公开(公告)日：2021-03-25

申请号：US16603662

申请日：2018-02-08

Applicant: WACKER CHEMIE AG

Inventor： Karl-Heinz RIMBOECK ,  Uwe PAETZOLD ,  Gerhard TRAUNSPURGER

IPC: C01B33/107 ,  G01N33/2022 ,  C01B33/037

Abstract: Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700° C., b) directing metallurgical silicon in which the free carbon proportion is ≤150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes. As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

公开(公告)号：US20170296942A1

公开(公告)日：2017-10-19

申请号：US15517080

申请日：2015-10-07

Applicant: Wacker Chemie AG

Inventor： Maximilian AIGNER ,  Uwe PAETZOLD ,  Jan PROCHASKA

IPC: B01D3/14 ,  C01B33/107

CPC classification number: B01D3/141 ,  B01D3/143 ,  C01B33/10778

Abstract: Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.

公开(公告)号：US20140105805A1

公开(公告)日：2014-04-17

申请号：US14031172

申请日：2013-09-19

Applicant: Wacker Chemie AG

Inventor： Walter HAECKL ,  Norbert ELLINGER ,  Andreas HIRSCHMANN ,  Markus KAHLER ,  Uwe PAETZOLD

IPC: C01B33/107

CPC classification number: C01B33/1071

Abstract: The invention provides a process for hydrogenating silicon tetrachloride in a reactor, in which reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature of greater than 900° C. at a pressure between 4 and 15 bar, first by means of at least one heat exchanger made from graphite and then by means of at least one heating element made from SiC-coated graphite, the temperature of the heating elements being between 1150° C. and 1250° C., wherein the reactant gas includes at least one boron compound selected from the group consisting of diborane, higher boranes, boron-halogen compounds and boron-silyl compounds, the sum of the concentrations of all boron compounds being greater than 1 ppmv based on the reactant gas stream.

Abstract translation: 本发明提供一种在反应器中氢化四氯化硅的方法，其中含有氢和四氯化硅的反应物气体在4至15巴之间的压力下被加热至大于900℃的温度，首先通过至少一个 热交换器由石墨制成，然后通过由SiC涂覆的石墨制成的至少一个加热元件，加热元件的温度在1150℃和1250℃之间，其中反应气体包括至少一种硼化合物 选自乙硼烷，高级硼烷，硼 - 卤素化合物和硼 - 甲硅烷基化合物，所有硼化合物的浓度之和大于1ppmv，基于反应气流。