公开(公告)号：US20030024469A1

公开(公告)日：2003-02-06

申请号：US10201431

申请日：2002-07-23

申请人： Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG

发明人： Ludwig Altmannshofer ,  Manfred Grundner ,  Janis Virbulis

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B29/06 ,  C30B13/26 ,  Y10T428/21

摘要： A silicon single crystal is produced by crucible-free float zone pulling, has a diameter of at least 200 mm over a length of at least 200 mm and is free of dislocations in the region of this length. A silicon wafer is separated from the silicon single crystal by a process for producing the silicon single crystal. The silicon single crystal is produced by crucible-free float zone pulling in a receptacle, in which an atmosphere of inert gas and nitrogen exerts a pressure of 1.5-2.2 bar, the atmosphere being continuously exchanged, with the volume of the receptacle being exchanged at least twice per hour. A flat coil with an external diameter of at least 220 mm is inserted in order to melt a stock ingot. The single crystal is pulled at a rate in a range from 1.4-2.2 mm/min and is periodically rotated through a sequence of rotation angles. The direction of rotation is changed, after each rotation, by a rotation angle belonging to the sequence, a change in the direction of rotating defining a turning point on the circumference of the single crystal, and at least one recurring pattern of turning points is formed, in which the turning points are distributed on straight lines which are oriented parallel to the z-axis and are uniformly spaced apart from one another.

摘要翻译： 通过无坩埚浮动区域拉伸制造硅单晶，在至少200mm的长度上具有至少200mm的直径，并且在该长度的区域中没有位错。 通过制造硅单晶的工艺将硅晶片与硅单晶分离。 硅单晶通过在容器中无坩埚浮动区域拉动而产生，其中惰性气体和氮气的气氛施加1.5-2.2巴的压力，连续更换气氛，将容器的体积更换为 每小时至少两次。 插入具有至少220mm的外径的扁平线圈以熔化原料锭。 单晶以1.4-2.2mm / min的速率被拉伸，并且通过一系列旋转角度周期性地旋转。 旋转方向在每次旋转之后改变属于该顺序的旋转角度，形成限定单晶圆周上的转折点的旋转方向的变化和至少一个转折点的重复图案 其中转折点分布在平行于z轴取向并且彼此均匀间隔开的直线上。