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    Analytical furnace with predictive temperature control
    1.
    发明申请
    Analytical furnace with predictive temperature control 有权
    具有预测温度控制的分析炉

    公开(公告)号：US20040173142A1

    公开(公告)日：2004-09-09

    申请号：US10791456

    申请日：2004-03-02

    发明人： Peter M. Willis

    IPC分类号： C30B001/00 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： F27D21/0014 ,  F27B14/00 ,  F27B14/20 ,  F27B17/02 ,  F27D19/00 ,  G01G19/00 ,  G01N5/04 ,  H05B6/28 ,  Y10T117/10

    摘要： An analytical furnace includes a predictive temperature control which is trained to model crucible temperature during analysis by employing a pair of temperature sensors, with one sensor being mounted in the furnace in fixed relationship and a second sensor which can be positioned within a crucible for training and tuning a crucible temperature profile, such that the crucible temperature in which a sample is placed is modeled and its response to the application of energy to the furnace in accordance with the furnace's dynamic thermal characteristics is known. By modeling the temperature profile within a crucible, the furnace can be controlled to provide a faster, more accurate analysis and prevent excessive overshooting of temperature as desired temperature plateaus are approached.

    摘要翻译： 分析炉包括预测温度控制，其通过采用一对温度传感器在分析期间对坩埚温度进行建模进行训练，其中一个传感器以固定关系安装在炉中，第二传感器可定位在坩埚内用于训练和 调整坩埚温度曲线，使得放置样品的坩埚温度被建模，并且根据炉的动态热特性对能量施加到炉子的响应是已知的。 通过对坩埚内的温度分布进行建模，可以控制炉子，以提供更快，更准确的分析，并防止温度过高，因为所需的温度平台接近。

    Shallow melt apparatus for semicontinuous czochralski crystal growth
    3.
    发明申请
    Shallow melt apparatus for semicontinuous czochralski crystal growth 失效
    用于半连续切克萨斯基晶体生长的浅熔体装置

    公开(公告)号：US20040200408A1

    公开(公告)日：2004-10-14

    申请号：US10494482

    申请日：2004-04-29

    发明人： Tihu Wang ,  Theodore F Ciszek

    IPC分类号： C30B015/00 ,  C30B001/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B29/06 ,  C30B15/02 ,  C30B15/12 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088

    摘要： In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

    摘要翻译： 在用于提供切克劳斯基晶体生长工艺的单晶拉制装置中，改进浅熔体坩埚（20），以消除必须提供大量必须预先装入深坩埚中的原料来生长大锭 ，包括具有加深的周边（25）的坩埚的气密容器，以防止浅熔体的咬合并减少湍流的熔融对流; 用于将源材料添加到半导体熔体的源供给装置; 双壁障（23），以最小化加深的周边（25）和生长室中的浅熔体之间的热传递; 在双重屏障（23）中的偏移孔（24），以增加加深的周边（25）和浅生长室之间的熔体移动长度; 和界面加热器/散热器（22），以控制界面形状和晶体生长速率。

    Crystal growth method
    6.
    发明申请
    Crystal growth method 有权
    晶体生长法

    公开(公告)号：US20030150373A1

    公开(公告)日：2003-08-14

    申请号：US10130671

    申请日：2002-09-24

    发明人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Shinichiro Miki ,  Manabu Nishimoto

    IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B15/14 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500null C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.

    摘要翻译： 在使用围绕单晶的冷却构件的CZ工艺中，允许冷却构件有效地用于增加拉制速度。 防止由于过度冷却导致的单晶的裂纹发生。 获得高质量的晶体。 为了实现这些目的，与单晶4的外周面相对的冷却部件6的内周面的温度即使在下端也被限制在500℃以下，其温度 成为最高的。 为了达到上述限制，冷却部件5的厚度T为10〜50mm。 冷却部件6的高度H为单晶4的直径D的0.1〜1.5倍。

    Dispersion management optical lithography crystals for below 160nm optical lithography method thereof
    7.
    发明申请
    Dispersion management optical lithography crystals for below 160nm optical lithography method thereof 审中-公开
    用于160nm以下光刻方法的色散管理光刻晶体

    公开(公告)号：US20030094128A1

    公开(公告)日：2003-05-22

    申请号：US09991399

    申请日：2001-11-20

    发明人： Robert W. Sparrow

    IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B11/00 ,  C30B29/12

    摘要： The present invention provides fluoride lens material crystals for VUV optical lithography systems and processes. The invention provides a fluoride optical lithography crystal for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons.

    摘要翻译： 本发明提供用于VUV光刻系统和工艺的氟化物透镜材料晶体。 本发明提供一种用于157nm光学微光刻元件的氟光学光刻晶体，其操作在193nm以下的光刻光子下。

    Rational directional solidification crystal growth system and method
    8.
    发明申请
    Rational directional solidification crystal growth system and method 失效

    公开(公告)号：US20030079675A1

    公开(公告)日：2003-05-01

    申请号：US10034378

    申请日：2002-01-03

    发明人： Chung-Wen Lan ,  Ya-Wen Yang

    IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B11/008 ,  C30B11/00 ,  C30B11/007 ,  C30B29/44 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

    摘要： A rotational directional solidification crystal growth system includes a vertical furnace, a crucible, and a rotate support device. The vertical furnace contains a high-temperature portion and a low-temperature portion. The crucible has a seed well and a growth region. The seed well and the growth region contain a seed crystal and raw material, respectively. The crucible moves from the high-temperature portion of the furnace to the low-temperature portion of the furnace or the thermal profile moves related to a stationary crucible to proceed the crystal growth. The rotation support device supports and rotates the crucible, and the tangent velocity of the rotated crucible is no less than about 5null/3 cm/s.

    Fluid sealing system for a crystal puller
    9.
    发明申请
    Fluid sealing system for a crystal puller 有权
    晶体拉拔器的流体密封系统

    公开(公告)号：US20040255847A1

    公开(公告)日：2004-12-23

    申请号：US10465528

    申请日：2003-06-19

    申请人： MEMC Electronic Materials, Inc.

    发明人： Carl F. Cherko ,  Robert D. Cook

    IPC分类号： C30B035/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B15/00 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/106 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealing system includes a fluid connector head adapted for connection to the fluid passage and to the fluid flow path to establish fluid communication between the fluid flow path and the outside of the housing. The head has a port adapted for fluid communication with the fluid passage through the wall of the housing. First and second seals around the port are adapted for sealing engagement with the head. A space is defined generally between the first and second seals, and a leak detector is arranged to monitor the space for detecting fluid leakage past at least one of the seals.

    摘要翻译： 提供流体密封系统用于晶体拉出器中用于生长单晶锭。 晶体拉出器具有壳体，容纳在壳体中的流体流路，以及通过壳体的壁的流体通道，用于流体流通。 流体密封系统包括适于连接到流体通道和流体流动路径的流体连接器头，以在流体流动路径和壳体的外部之间建立流体连通。 头部具有适于与通过壳体的壁的流体通道流体连通的端口。 端口周围的第一和第二密封件适于与头部进行密封接合。 通常在第一和第二密封件之间限定空间，并且设置泄漏检测器以监测用于检测通过至少一个密封件的流体泄漏的空间。

    METHOD OF LASER CRYSTALLIZATION
    10.
    发明申请
    METHOD OF LASER CRYSTALLIZATION 有权
    激光结晶方法

    公开(公告)号：US20040118335A1

    公开(公告)日：2004-06-24

    申请号：US10249892

    申请日：2003-05-15

    发明人： Mao-Yi Chang

    IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B29/06 ,  C30B13/24

    摘要： At least one amorphous silicon island is formed on a substrate first. A first step and a second step laser crystallization processes are thereafter performed in sequence. The amorphous silicon island is irradiated with a laser pulse having a first energy density to re-crystallize an edge portion of the amorphous silicon island into a polysilicon structure. The amorphous silicon island is then irradiated with a laser pulse having a second energy density to re-crystallize a center portion of the amorphous silicon island into a polysilicon structure.

    摘要翻译： 首先在基板上形成至少一个非晶硅岛。 之后依次进行第一步骤和第二步骤的激光结晶处理。 用具有第一能量密度的激光脉冲照射非晶硅岛，以使非晶硅岛的边缘部分再结晶成多晶硅结构。 然后用具有第二能量密度的激光脉冲照射非晶硅岛，以将非晶硅岛的中心部分重新结晶成多晶硅结构。