公开(公告)号：US08232177B2

公开(公告)日：2012-07-31

申请号：US12570415

申请日：2009-09-30

申请人： Wagdi Abadeer ,  Lilian Kamal, legal representative ,  Kiran V Chatty ,  Robert J Gauthier, Jr. ,  Jed H Rankin ,  Robert R Robison ,  William Tonti

发明人： Wagdi Abadeer ,  Kiran V Chatty ,  Robert J Gauthier, Jr. ,  Jed H Rankin ,  Robert R Robison ,  William Tonti

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process expands the implanted regions such their boundaries align within a predetermined distance from the edge of a trench. The distances are proportionate for each trench and each adjacent isolation region.

摘要翻译： 本文描述了用于减小缩放半导体技术中的可变寄生双极性泄漏的解决方案。 在浅沟槽隔离（STI）区域下的植入物的边缘，通过与仅使用标准光刻掩模相比更加精确地产生屏蔽区域而不是植入屏蔽区域来消除放置变化。 退火处理使注入区域扩展，使其边界在与沟槽边缘预定距离内对齐。 距离对于每个沟槽和每个相邻的隔离区域是成比例的。