摘要:
A method and circuit for tunneling leakage current compensation, the method including: forcing a current of known value through a tunneling current leakage monitor device to provide a voltage signal; and regulating an on-chip power supply of the integrated circuit chip based on the voltage signal.
摘要:
A voltage divider for integrated circuits that does not include the use of resistors. In one embodiment, voltage node VDD is connected with two n-type transistors, NFET1 and NFET2, which are connected in series. NFET 1 includes a source (12), a drain (14), a gate electrode (16) having a gate area A1 (not shown), and a p-substrate (18). NFET2 includes a source (20), a drain (22), a gate electrode (24) having a gate area A2 (not shown), and a p-substrate (26). Source (12) and drain (14) of NFET1 are coupled with gate electrode (24) of NFET2. The voltage difference between NFET1 and NFET2 has a linear function with VDD. As a result, voltage VDD may be divided between NFET1 and NFET2 by properly choosing the ratio between each of the respective transistor gate electrode areas, (A1) and (A2).
摘要:
An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).
摘要:
An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).
摘要:
A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.
摘要:
A design structure for an integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level.
摘要:
The present disclosure is directed to a CMOS active pixel sensor that compensates for variations in a threshold voltage of a source follower contained therein. A structure in accordance with an embodiment includes: a replica source follower transistor; a system for creating a current in said replica source follower transistor such that a gate-source voltage of said replica source follower is substantially equal to a threshold voltage of said replica source follower; and a current mirror for biasing the isolation source follower transistor at a same current density as the replica source follower transistor.
摘要:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a first structure for determining a non-linear characteristic of the input voltage to the output frequency response, the first design structure providing a tunneling-based current relationship with the input voltage. Also disclosed is a system and a method of implementing such structure.
摘要:
An integrated circuit amplifier includes, in an exemplary embodiment, a first field effect transistor (FET) device configured as a common source amplifier with source degeneration and a second FET device configured as a tunneling gate FET, the tunneling gate FET coupled to the source follower. The tunneling gate FET is further configured so as to set a transconductance of the amplifier and the common source amplifier with source degeneration is configured so as to set an output conductance of the amplifier.
摘要:
An integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level.