公开(公告)号：US06287884B1

公开(公告)日：2001-09-11

申请号：US09234331

申请日：1999-01-20

申请人： Wang Zhi Jie ,  Chua Soo Jin

发明人： Wang Zhi Jie ,  Chua Soo Jin

IPC分类号： H01L2100

CPC分类号： H01L31/184 ,  H01S5/227 ,  H01S5/2275 ,  Y02E10/544

摘要： A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinement layer, a first InP cladding layer and a native oxidized Al-bearing layer as current blocking layers at both lateral edges, a second InP cladding layer, contact layer, contact metal, and the second ridge mesa covered with insulating layer. This method is to facilitate the processing of conventional buried hetero-structure InP-based opto-electronic device and improve the performance under high temperature and high current operation.

摘要翻译： 用于基于InP的光电器件的具有天然氧化电流阻挡层的掩埋异质结构包括InP半导体衬底，缓冲层，含有下约束层的脊台面，有源层和上光栅约束层，第一InP包层 并且在两个侧边缘处具有作为电流阻挡层的天然氧化的Al承载层，第二InP包覆层，接触层，接触金属和覆盖有绝缘层的第二脊台面。 这种方法是为了便于处理传统的埋入异质结InP型光电器件，提高了高温高电流运行时的性能。