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    Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry
    1.
    发明授权
    Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry 有权
    用二氧化铈浆料抛光的化学机械抛光工具的垫片插入方法

    公开(公告)号：US07070484B2

    公开(公告)日：2006-07-04

    申请号：US10851549

    申请日：2004-05-21

    申请人： Kuo-Chun Wu ,  Wee-chen Richard Gan ,  Karen Wong

    发明人： Kuo-Chun Wu ,  Wee-chen Richard Gan ,  Karen Wong

    IPC分类号： B24B1/00

    CPC分类号： B24B53/017 ,  B24B37/042

    摘要： A chemical mechanical polishing (CMP) method is disclosed in which a new polishing pad is broken-in and conditioned into a steady operating state while using a silica (SiO2) based CMP slurry and where the broken-in and conditioned pad is afterwards used for polishing patterned workpieces (e.g., semiconductor wafers) with a ceria (CeO2) based CMP slurry. The approach shortens break-in time and appears to eliminate a first wafer effect usually seen following break-in with ceria-based CMP slurries.

    摘要翻译： 公开了一种化学机械抛光（CMP）方法，其中在使用基于二氧化硅（SiO 2/2））的CMP浆料的同时，将新的抛光垫破碎并调节至稳定的运行状态， 然后将调节垫用于用基于二氧化铈（CeO 2 N 2）的CMP浆料抛光图案化工件（例如，半导体晶片）。 该方法缩短了插入时间，并且似乎消除了通过二氧化铈基CMP浆料破裂后通常看到的第一晶片效应。

    Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer
    2.
    发明授权
    Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer 有权
    用于化学机械抛光工具的基于扭矩的终点检测方法，其使用二氧化铈基CMP浆料抛光至保护垫层

    公开(公告)号：US07040958B2

    公开(公告)日：2006-05-09

    申请号：US10851378

    申请日：2004-05-21

    申请人： Wee-chen Richard Gan ,  Karen Wong ,  Kuo-Chun Wu

    发明人： Wee-chen Richard Gan ,  Karen Wong ,  Kuo-Chun Wu

    IPC分类号： B24B49/00

    CPC分类号： B24B37/013 ,  B24B49/16

    摘要： A chemical mechanical polishing (CMP) method is disclosed in which a torque-based end-point algorithm is used to determine when polishing should be stopped. The end-point algorithm is applicable to situations where a ceria (CeO2) based CMP slurry is used for further polishing, pre-patterned and pre-polished workpieces (e.g., semiconductor wafers) which have a high friction over-layer (e.g., HDP-oxide) and a comparatively, lower friction and underlying layer of sacrificial pads (e.g., silicon nitride pads). A mass production wise, reliable and consistent signature point in the friction versus time waveform of a torque-representing signal is found and used to trigger an empirically specified duration of overpolish. A database may be used to define the overpolish time as a function of one or more relevant parameters.

    摘要翻译： 公开了一种化学机械抛光（CMP）方法，其中使用基于扭矩的端点算法来确定何时停止抛光。 端点算法适用于将基于二氧化铈（CeO 2/2）的CMP浆料用于进一步抛光，预图案化和预抛光工件（例如，半导体晶片）的情况，其具有高的 摩擦过度层（例如，HDP氧化物）和相对较低的摩擦和下层的牺牲垫（例如，氮化硅垫）。 发现在扭矩表示信号的摩擦时间波形中的大规模生产明智，可靠和一致的签名点，并用于触发经验规定的过度推测的持续时间。 可以使用数据库来定义作为一个或多个相关参数的函数的过时时间。