公开(公告)号：US20100330795A1

公开(公告)日：2010-12-30

申请号：US12872522

申请日：2010-08-31

申请人： Wei D. Wang ,  Srinivas Gandikota ,  Kishore Lavu

发明人： Wei D. Wang ,  Srinivas Gandikota ,  Kishore Lavu

IPC分类号： H01L21/283 ,  H01L21/768

CPC分类号： C23C14/16 ,  C23C14/0641 ,  H01L21/28061 ,  H01L29/4941

摘要： A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.

摘要翻译： 通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。 在氮化钨的反应溅射沉积期间，可以使用氩作为溅射工作气体。 当钨层的厚度小于50nm时，降低钨电阻率的有益效果增加，当小于35nm时，钨电阻率的降低进一步增加。 该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠，其中氮化钨作为势垒。 可以实施本发明的等离子体溅射室包括氪气，氩气和氮气的气源。

公开(公告)号：US20090053882A1

公开(公告)日：2009-02-26

申请号：US11841205

申请日：2007-08-20

申请人： WEI D. WANG ,  Srinivas Gandikota ,  Kishore Lavu

发明人： WEI D. WANG ,  Srinivas Gandikota ,  Kishore Lavu

IPC分类号： H01L21/3205 ,  C23C16/00

CPC分类号： C23C14/16 ,  C23C14/0641 ,  H01L21/28061 ,  H01L29/4941

摘要： A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.

摘要翻译： 通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。 在氮化钨的反应溅射沉积期间，可以使用氩作为溅射工作气体。 当钨层的厚度小于50nm时，降低钨电阻率的有益效果增加，当小于35nm时，钨电阻率的降低进一步增加。 该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠，其中氮化钨作为势垒。 可以实施本发明的等离子体溅射室包括氪气，氩气和氮气的气源。

公开(公告)号：US08216933B2

公开(公告)日：2012-07-10

申请号：US12872522

申请日：2010-08-31

申请人： Wei D. Wang ,  Srinivas Gandikota ,  Kishore Lavu

发明人： Wei D. Wang ,  Srinivas Gandikota ,  Kishore Lavu

IPC分类号： H01L21/02

CPC分类号： C23C14/16 ,  C23C14/0641 ,  H01L21/28061 ,  H01L29/4941

摘要： A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.

摘要翻译： 通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。 在氮化钨的反应溅射沉积期间，可以使用氩作为溅射工作气体。 当钨层的厚度小于50nm时，降低钨电阻率的有益效果增加，当小于35nm时，钨电阻率的降低进一步增加。 该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠，其中氮化钨作为势垒。 可以实施本发明的等离子体溅射室包括氪气，氩气和氮气的气源。

公开(公告)号：US07790604B2

公开(公告)日：2010-09-07

申请号：US11841205

申请日：2007-08-20

申请人： Wei D. Wang ,  Srinivas Gandikota ,  Kishore Lavu

发明人： Wei D. Wang ,  Srinivas Gandikota ,  Kishore Lavu

IPC分类号： H01L21/00

CPC分类号： C23C14/16 ,  C23C14/0641 ,  H01L21/28061 ,  H01L29/4941

摘要： A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.

摘要翻译： 通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。 在氮化钨的反应溅射沉积期间，可以使用氩作为溅射工作气体。 当钨层的厚度小于50nm时，降低钨电阻率的有益效果增加，当小于35nm时，钨电阻率的降低进一步增加。 该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠，其中氮化钨作为势垒。 可以实施本发明的等离子体溅射室包括氪气，氩气和氮气的气源。