公开(公告)号：US07528044B2

公开(公告)日：2009-05-05

申请号：US11562522

申请日：2006-11-22

Applicant: Wen Chin Lee

Inventor： Wen Chin Lee

IPC: H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L29/1054 ,  H01L21/823807 ,  H01L29/78

Abstract: Disclosed is a method of manufacturing microelectronic devices including forming a silicon substrate with first and second wells of different dopant characteristics, forming a first strained silicon-germanium-carbon layer of a first formulation proximate to the first well, and forming a second strained silicon-germanium-carbon layer of a second formulation distinct from the first formulation proximate to the second well. Capping and insulating layers, gate structures, spacers, and sources and drains are then formed, thereby creating a CMOS device with independently strained channels.

Abstract translation: 公开了一种制造微电子器件的方法，包括用具有不同掺杂剂特性的第一和第二阱形成硅衬底，形成靠近第一阱的第一制剂的第一应变硅 - 锗 - 碳层，以及形成第二应变硅 - 不同于靠近第二孔的第一制剂的第二制剂的锗 - 碳层。 然后形成封盖和绝缘层，栅极结构，间隔物以及源极和漏极，从而产生具有独立应变通道的CMOS器件。