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1.发明授权Method to improve photomask critical dimension uniformity and photomask fabrication process 失效提高光掩模临界尺寸均匀性和光掩模制造工艺的方法公开(公告)号：US07060400B2
公开(公告)日：2006-06-13
申请号：US10637347
申请日：2003-08-08
申请人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Chen Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
发明人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Chen Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
IPC分类号： G01F9/00
CPC分类号： G03F1/76 , G03F7/0035
摘要： A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.
摘要翻译： 制造具有满足或超过90纳米技术要求的改进的临界尺寸（CD）均匀性的光掩模的方法。 该方法包括以下步骤：提供用不透明材料层和光致抗蚀剂层覆盖的透明基板; 图案化光致抗蚀剂层以暴露不透明材料层的区域，其具有跟随由不透明材料层限定的主图案区域的轮廓的形状; 去除暴露区域以将不透明材料层定义到主图案区域中并且围绕主图案区域的区域; 去除图案化的光刻胶层; 并去除不透明材料层的周围区域。
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2.发明申请Method to improve photomask critical dimension uniformity and photomask fabrication process 失效提高光掩模临界尺寸均匀性和光掩模制造工艺的方法公开(公告)号：US20050031966A1
公开(公告)日：2005-02-10
申请号：US10637347
申请日：2003-08-08
申请人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Chen Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
发明人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Chen Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
CPC分类号： G03F1/76 , G03F7/0035
摘要： A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.
摘要翻译： 制造具有满足或超过90纳米技术要求的改进的临界尺寸（CD）均匀性的光掩模的方法。 该方法包括以下步骤：提供用不透明材料层和光致抗蚀剂层覆盖的透明基板; 图案化光致抗蚀剂层以暴露不透明材料层的区域，其具有跟随由不透明材料层限定的主图案区域的轮廓的形状; 去除暴露区域以将不透明材料层定义到主图案区域中并且围绕主图案区域的区域; 去除图案化的光刻胶层; 并去除不透明材料层的周围区域。
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