公开(公告)号：US20240118613A1

公开(公告)日：2024-04-11

申请号：US18239333

申请日：2023-08-29

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masaaki Kotake ,  Kenji Funatsu ,  Masahiro Fukushima ,  Yuta Matsuzawa

IPC: G03F7/039 ,  C08F212/14 ,  G03F1/76

CPC classification number: G03F7/0392 ,  C08F212/24 ,  G03F1/76 ,  G03F7/0397

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a phenolic hydroxy group protected with an acid labile group, in which a carbon atom neighboring the carbon atom to which the phenolic hydroxy group protected with an acid labile group is attached is substituted with a specific group. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

公开(公告)号：US20240012324A1

公开(公告)日：2024-01-11

申请号：US18472981

申请日：2023-09-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Yu CHEN ,  Chi-Hung LIAO

IPC: G03F1/76 ,  H01L21/308 ,  H01L21/027 ,  G03F7/20 ,  G03F1/00 ,  G03F7/16 ,  G03F7/30

CPC classification number: G03F1/76 ,  H01L21/3086 ,  H01L21/0274 ,  G03F7/20 ,  G03F1/00 ,  G03F7/162 ,  G03F7/30

Abstract: A photomask includes a substrate, an opaque filling formed embedded in the substrate, and an opaque main feature over the substrate. The opaque filling has a first width. The opaque main has a second width greater than the first width of the opaque filling. The opaque filling and the opaque main feature comprise same material.

公开(公告)号：US11822233B2

公开(公告)日：2023-11-21

申请号：US16931208

申请日：2020-07-16

Applicant: Lasertec Corporation

Inventor： Hiroki Miyai ,  Yoshito Fujiwara ,  Yoshihiro Kato

IPC: G03F1/84 ,  G03F1/24 ,  G03F1/76 ,  G03F1/66 ,  G03F1/44 ,  G03B13/36

CPC classification number: G03F1/84 ,  G03B13/36 ,  G03F1/24 ,  G03F1/44 ,  G03F1/66 ,  G03F1/76

Abstract: An image pickup apparatus includes a stage configured to support a sample at a plurality of support points, a bending data acquisition unit configured to acquire bending data corresponding to a bending of the sample supported on the stage, a height information detection unit configured to detect a height of the sample supported on the stage, a difference value calculation unit configured to calculate a difference value between a height indicated by height information and a height indicated by the bending data at each of a plurality of points on the sample, a correction data calculation unit configured to calculate correction data based on the difference value, and an estimation unit configured to calculate estimation data for estimating the height of the sample by correcting the bending data using the correction data.

公开(公告)号：US20230314927A1

公开(公告)日：2023-10-05

申请号：US17833830

申请日：2022-06-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Sheng-Min WANG ,  Yu-Tse LAI ,  Ken-Hsien HSIEH

IPC: G03F1/24 ,  G03F1/76

CPC classification number: G03F1/24 ,  G03F1/76

Abstract: A photo mask for an extreme ultraviolet (EUV) lithography includes a circuit pattern, and sub-resolution assist patterns disposed around and connected to the circuit pattern. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

公开(公告)号：US11714347B2

公开(公告)日：2023-08-01

申请号：US17245947

申请日：2021-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Yong Lee ,  Min-Cheol Kang ,  U Seong Kim ,  Seung Hune Yang ,  Jee Yong Lee

IPC: G03F1/36 ,  G03F1/76 ,  G06T3/40 ,  G06T7/00 ,  G06F30/3323 ,  G06F30/392

CPC classification number: G03F1/36 ,  G03F1/76 ,  G06F30/3323 ,  G06F30/392 ,  G06T3/4046 ,  G06T7/0006 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: A process proximity correction method is performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors. The process proximity correction method includes: converting a target layout including a plurality of patterns into an image, zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels, receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI), comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error, and adjusting the target layout on the basis of the after-cleaning image error.

公开(公告)号：US20190004416A1

公开(公告)日：2019-01-03

申请号：US15816393

申请日：2017-11-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shiang-Bau Wang ,  Syun-Ming Jang

IPC: G03F1/24 ,  H01L21/027 ,  G03F1/46 ,  G03F1/52 ,  G03F1/76 ,  G03F1/80 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/40 ,  G03F1/42 ,  G03F1/46 ,  G03F1/52 ,  G03F1/76 ,  G03F1/80 ,  G03F7/2008 ,  H01L21/0276

Abstract: In an embodiment, a photomask includes: a substrate over a first conductive layer, the substrate formed of a low thermal expansion material (LTEM); a second conductive layer over the first conductive layer; a reflective film stack over the substrate; a capping layer over the reflective film stack; an absorption layer over the capping layer; and an antireflection (ARC) layer over the absorption layer, where the ARC layer and the absorption layer have a plurality of openings in a first region exposing the capping layer, where the ARC layer, the absorption layer, the capping layer, and the reflective film stack have a trench in a second region exposing the second conductive layer.

公开(公告)号：US20180232480A1

公开(公告)日：2018-08-16

申请号：US15949460

申请日：2018-04-10

Applicant: Texas Instruments Incorporated

Inventor： Sumanth SOMASHEKAR ,  Shaibal BARUA ,  Padman SOORYAMOORTHY

IPC: G06F17/50 ,  G03F1/76 ,  G03F1/70 ,  H01L23/522 ,  H01L23/532

CPC classification number: G06F17/5072 ,  G03F1/70 ,  G03F1/76 ,  H01L23/522 ,  H01L23/53228

Abstract: A layout file for an integrated circuit has drawn geometries. Variable fill geometries are added to local areas based on densities of the drawn geometries in windows associated with the local areas and on the global density of all the drawn geometries in the layout file. Each window has a separate local area associated with it. The densities of the variable fill geometries in the local areas are not all equal. Densities of the fill geometries are higher in local areas associated with windows having lower densities of the drawn geometries, and for lower values of the global density. The layout file is stored in a computer-readable medium which may be used to produce a photomask for manufacturing an integrated circuit.

公开(公告)号：US20180157159A1

公开(公告)日：2018-06-07

申请号：US15422654

申请日：2017-02-02

Applicant: Toshiba Memory Corporation

Inventor： Masaki MAE ,  Suigen KANDA

IPC: G03F1/22 ,  H01L21/027 ,  H01L21/311 ,  G03F7/16 ,  G03F7/20 ,  G03F7/095 ,  G03F7/26

CPC classification number: G03F7/26 ,  G03F1/50 ,  G03F1/60 ,  G03F1/70 ,  G03F1/76 ,  G03F7/095 ,  G03F7/16 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/2022 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/11575 ,  H01L27/11582

Abstract: A photomask according to the embodiment includes a glass substrate which has a first face and a second face located on a side opposite from the first face. The second face includes a transmission area and a light shielding area corresponding to an exposure pattern of a resist film exposed via the glass substrate. The transmission area is oblique to the first face.

公开(公告)号：US09817307B2

公开(公告)日：2017-11-14

申请号：US15010856

申请日：2016-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao Yu ,  Ming-Yun Chen

IPC: G03F1/22 ,  G03F1/72 ,  G03F1/24 ,  G03F1/76 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/72 ,  G03F1/76 ,  G03F1/80

Abstract: Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

公开(公告)号：US20170139319A1

公开(公告)日：2017-05-18

申请号：US15323171

申请日：2016-02-19

Applicant: BOE Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Inventor： Shenjun Zhang ,  Guofeng Weng

IPC: G03F1/38 ,  G03F1/76

CPC classification number: G03F1/38 ,  G03F1/76 ,  H01L51/0011

Abstract: The present disclosure discloses a mask sheet and a method of manufacturing a mask sheet, which belong to display technique field. The mask sheet includes a light shielding region and a light transmitting region. The light shielding region includes an adjoining portion which is located at a position where the light shielding region adjoins the light transmitting region, and thickness of other portion of the light shielding region of the mask sheet except the adjoining portion is greater than that of the adjoining portion of the mask sheet.