公开(公告)号：US20060095626A1

公开(公告)日：2006-05-04

申请号：US10975602

申请日：2004-10-28

申请人： Wen-Jiunn Tsay ,  Wei-Tung Yang ,  Yong-Qin Ko ,  Ko-Yun Weng

发明人： Wen-Jiunn Tsay ,  Wei-Tung Yang ,  Yong-Qin Ko ,  Ko-Yun Weng

IPC分类号： G06F13/00

CPC分类号： G06F13/385

摘要： The present invention discloses a multi-function interface card. The multi-function interface card comprises a central processor mounted on a PCB (printed circuits board). A communication module is coupled to the central processor. An arbitrator is coupled to the central processor. An interface is coupled to the arbitrator to act as I/O for exchanging signal between the multi-function interface card and an external device. A plurality of switches are included, wherein each one of the plurality of switches is coupled to the arbitrator respectively. A plurality of controllers are included, wherein each one of the plurality of controllers is coupled to corresponding one of the plurality of switches respectively. The arbitrator is capable of recognizing a configuration access from an input signal received by the arbitrator and to determine which one switch of the plurality of switches is turned off thereby allowing the corresponding function controller to respond to the data access.

摘要翻译： 本发明公开了一种多功能接口卡。 多功能接口卡包括安装在PCB（印刷电路板）上的中央处理器。 通信模块耦合到中央处理器。 仲裁器耦合到中央处理器。 一个接口耦合到仲裁器，作为用于在多功能接口卡和外部设备之间交换信号的I / O。 包括多个开关，其中多个开关中的每一个分别耦合到仲裁器。 包括多个控制器，其中多个控制器中的每一个分别耦合到多个开关中的对应的一个。 仲裁器能够从仲裁员接收到的输入信号中识别配置访问，并确定多个交换机中的哪个交换机被关闭，从而允许相应的功能控制器响应数据访问。

公开(公告)号：US08053370B2

公开(公告)日：2011-11-08

申请号：US11971001

申请日：2008-01-08

申请人： Wei-Tung Yang ,  An-Hsiung Liu

发明人： Wei-Tung Yang ,  An-Hsiung Liu

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/76816 ,  H01L27/10891 ,  H01L27/10894

摘要： A method for forming a semiconductor device is disclosed. A substrate comprising a structural layer thereon is provided. A hard mask layer is formed on the structural layer. A photoresist layer is formed on the hard mask layer. The photoresist layer is patterned to from a plurality of main photoresist patterns and at least one dummy photoresist pattern between the main photoresist patterns or adjacent to one of the main photoresist patterns, wherein width of the dummy photoresist pattern is less than that of the main photoresist patterns. Two main photoresist patterns are separated with each other by a first opening, and two dummy photoresist patterns are separated with each other by a second opening. Width of the second opening is less than that of the first opening. The hard mask layer is patterned using the patterned photoresist layer as a mask. The structural layer is patterned using the patterned hard mask layer as a mask.

摘要翻译： 公开了一种用于形成半导体器件的方法。 提供了包括其上的结构层的衬底。 在结构层上形成硬掩模层。 在硬掩模层上形成光致抗蚀剂层。 光致抗蚀剂层从多个主光致抗蚀剂图案和主光致抗蚀剂图案之间的至少一个伪光致抗蚀剂图案图案化，或者与主光致抗蚀剂图案之一相邻，其中，伪光刻胶图案的宽度小于主光致抗蚀剂图案的宽度 模式。 两个主要的光致抗蚀剂图案通过第一开口彼此分离，并且两个伪光刻胶图案通过第二开口彼此分离。 第二开口的宽度小于第一开口的宽度。 使用图案化的光致抗蚀剂层作为掩模来对硬掩模层进行图案化。 使用图案化的硬掩模层作为掩模来对结构层进行图案化。

公开(公告)号：US20080242100A1

公开(公告)日：2008-10-02

申请号：US11971001

申请日：2008-01-08

申请人： Wei-Tung Yang ,  An-Hsiung Liu

发明人： Wei-Tung Yang ,  An-Hsiung Liu

IPC分类号： H01L21/308

CPC分类号： H01L21/32139 ,  H01L21/76816 ,  H01L27/10891 ,  H01L27/10894

摘要： A method for forming a semiconductor device is disclosed. A substrate comprising a structural layer thereon is provided. A hard mask layer is formed on the structural layer. A photoresist layer is formed on the hard mask layer. The photoresist layer is patterned to from a plurality of main photoresist patterns and at least one dummy photoresist pattern between the main photoresist patterns or adjacent to one of the main photoresist patterns, wherein width of the dummy photoresist pattern is less than that of the main photoresist patterns. Two main photoresist patterns are separated with each other by a first opening, and two dummy photoresist patterns are separated with each other by a second opening. Width of the second opening is less than that of the first opening. The hard mask layer is patterned using the patterned photoresist layer as a mask. The structural layer is patterned using the patterned hard mask layer as a mask.

摘要翻译： 公开了一种用于形成半导体器件的方法。 提供了包括其上的结构层的衬底。 在结构层上形成硬掩模层。 在硬掩模层上形成光致抗蚀剂层。 光致抗蚀剂层从多个主光致抗蚀剂图案和主光致抗蚀剂图案之间的至少一个伪光致抗蚀剂图案图案化，或者与主光致抗蚀剂图案之一相邻，其中，伪光刻胶图案的宽度小于主光致抗蚀剂图案的宽度 模式。 两个主要的光致抗蚀剂图案通过第一开口彼此分离，并且两个伪光刻胶图案通过第二开口彼此分离。 第二开口的宽度小于第一开口的宽度。 使用图案化的光致抗蚀剂层作为掩模来对硬掩模层进行图案化。 使用图案化的硬掩模层作为掩模来对结构层进行图案化。