公开(公告)号：US20130241056A1

公开(公告)日：2013-09-19

申请号：US13418452

申请日：2012-03-13

申请人： Wen-Ping HUANG ,  Wen-Hu Wu ,  His-Piao Lai ,  Chien-Wu Chen

发明人： Wen-Ping HUANG ,  Wen-Hu Wu ,  His-Piao Lai ,  Chien-Wu Chen

IPC分类号： H01L29/861 ,  H01L21/329

CPC分类号： H01L29/66136 ,  H01L29/861 ,  H01L29/8611

摘要： A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc.

摘要翻译： 一种通孔型二极管元件/元件制造方法，其具有通过在穿透型之后的金属化工艺在同一平面上构建的二极管元件/部件的一对（成对）第一和第二电极，以穿透 PN结耗尽区域/势垒区域，并且引导电极之一的电子不受阻碍地流过耗尽/屏障区域; 本发明直接进行绝缘保护，金属化和细长焊球等工艺，可以独立完成芯片级封装（CSP）的新技术; 它具有以下特点：谷物正好是产品生产，不需要连线，能耗低，成本低，重量轻，薄而小。

公开(公告)号：US08791551B2

公开(公告)日：2014-07-29

申请号：US13418452

申请日：2012-03-13

申请人： Wen-Ping Huang ,  Wen-Hu Wu ,  His-Piao Lai ,  Chien-Wu Chen

发明人： Wen-Ping Huang ,  Wen-Hu Wu ,  His-Piao Lai ,  Chien-Wu Chen

IPC分类号： H01L29/06 ,  H01L21/00 ,  H01L29/66 ,  H01L29/861

CPC分类号： H01L29/66136 ,  H01L29/861 ,  H01L29/8611

摘要： A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc.

摘要翻译： 一种通孔型二极管元件/元件制造方法，其具有通过在穿透型之后的金属化工艺在同一平面上构建的二极管元件/部件的一对（成对）第一和第二电极，以穿透 PN结耗尽区域/势垒区域，并且引导电极之一的电子不受阻碍地流过耗尽/屏障区域; 本发明直接进行绝缘保护，金属化和细长焊球等工艺，可以独立完成芯片级封装（CSP）的新技术; 它具有以下特点：谷物正好是产品生产，不需要连线，能耗低，成本低，重量轻，薄而小。